The development of electrical contacts to silicon carbide with low specific resistivity and stability is a critical requirement for harsh environment MEMS applications. In this paper, we present a novel method to lower the ohmic contact resistivity and enhance the stability of Pt contacts to polycrystalline 3C-SiC (poly-SiC) operated at elevated temperatures. In particular, nanocrystalline grap...

We have investigated SiC/oxide interface structures by the use of spectroscopic ellipsometry. The depth profile of the optical constants of thermally grown oxide layers on SiC was obtained by observing the slope-shaped oxide layers, and the results suggest the existence of the interface layers, around 1 nm in thickness, having high refractive index than those of both SiC and SiO2. The wavelengt...

Abstract In this paper, we present a successive interference cancellation (SIC) scheme for a multicarrier (MC) DS CDMA system. In every subband, the SIC receiver successively detects the interferers' signals and substracts them from the user-of-interest. A comparison is made among SIC, matched lter detection with an equal gain combiner (MF-EGC), matched lter followed by maximal-ratio combining ...

BACKGROUND Group A streptococcus (GAS) is an etiological agent for the immune mediated sequela post streptococcal glomerulonephritis (PSGN). In some populations PSGN is recognized as a risk factor for chronic kidney disease (CKD) and end-stage renal disease (ESRD). It was found that a significantly greater proportion of subjects with past history of PSGN than without the history exhibited seror...

The optical and electrical properties of Si rich SiC (SRSC) solar cell absorber layers will strongly depend on interfacial layers between the Si and the SiC matrix and in this work, we analyze hitherto undiscovered interfacial layers. The SRSC thin films were deposited using a plasma-enhanced chemical vapor deposition (PECVD) technique and annealed in a nitrogen environment at 1100 °C. The ther...

The propagation of the fundamental quasi-symmetric Lamb mode S(0) travelling along 3C-SiC/c-AlN composite plates is theoretically studied with respect to the AlN and SiC film thickness, the acoustic wave propagation direction and the electrical boundary conditions. The temperature effects on the phase velocity have been considered for four AlN/SiC-based electroacoustic coupling configurations, ...

The properties of co-sputtered Cu embedded amorphous SiC were studied. The effect of the microstructure features on the electrical conduction of the SiC films, with Cu volume% between 0% and 57%, was analysed by temperature dependent measurements, along with an effective-medium approximation model. The electrical conduction in Cu embedded amorphous SiC, was attributed to the tunnelling mechanis...

The performances of different promoters (CeO2, ZrO2 and Ce0.5Zr0.5O2 solid solution) modified Pd/SiC catalysts for methane combustion are studied. XRD and XPS results showed that Zr 4+ could be incorporated into the CeO2 lattice to form Zr0.5Ce0.5O2 solid solution. The catalytic activities of Pd/CeO2/SiC and Pd/ZrO2/SiC are lower than that of Pd/Zr0.5Ce0.5O2/SiC. The Pd/Zr0.5Ce0.5O2/SiC catalys...

We utilize the recently suggested capture-emission-time (CET) maps [1] for the first time for SiC technologies. CET maps are a very powerful characterization technique which allow the elegant and comprehensive analysis of oxide/interface traps at or near the semiconductor-dielectric interface and were originally developed to characterize degradation of Si based MOSFETs. For asprocessed SiC MOSF...