Over the past years, to achieve better sensing performance, hafnium dioxide (HfO2) has been studied as an ion-sensitive layer. In this work, thin layers of were used pH-sensitive membranes and deposited by atomic layer deposition (ALD) process onto electrolytic-insulating-semiconductor structure Al/Si/SiO2/HfO2 for realization a pH sensor. The thicknesses HfO2 in work was 15, 19.5 39.9 nm. thic...

HfO2-based resistive random-access memory (RRAM) with a Ti buffer layer has been extensively studied as an emerging nonvolatile (eNVM) candidate because of its excellent switching (RS) properties and CMOS process compatibility. However, detailed understanding the nature thickness-dependent RS systematic thermal degradation research about effect post-metallization annealing (PMA) time on oxygen ...

Group IV quantum dots (QDs) in HfO2 are attractive for non-volatile memories (NVMs) due to complementary metal-oxide semiconductor (CMOS) compatibility. Besides the role of charge storage centers, SiGeSn QDs have advantage a low thermal budget formation, because Sn presence decreases crystallization temperature, while Si ensures higher stability. In this paper, we prepare MOS capacitors based o...

Phase stabilities of Hf-Si-O and Zr-Si-O have been studied with first-principles and thermodynamic modeling. From the obtained thermodynamic descriptions, phase diagrams pertinent to thin film processing were calculated. We found that the relative stability of the metal silicates with respect to their binary oxides plays a critical role in silicide formation. It was observed that both the HfO2/...

WO3 vertical plate-like arrays provide a direct pathway for charge transport, and thus hold great potential as working electrodes for photoelectrochemical (PEC) water splitting. However, surface recombination due to surface defects hinders the performance improvement. In this work, WO3 vertical plate-like arrays films with HfO2 passivation layer were fabricated via a simple dip-coating method. ...

With the continuous scaling of resistive random access memory (RRAM) devices, in-depth understanding of the physical mechanism and the material issues, particularly by directly studying integrated cells, become more and more important to further improve the device performances. In this work, HfO2-based integrated 1-transistor-1-resistor (1T1R) RRAM devices were processed in a standard 0.25 μm c...

In situ-formed SiO2 was introduced into HfO2 gate dielectrics on Ge substrate as interlayer by plasma-enhanced atomic layer deposition (PEALD). The interfacial, electrical, and band alignment characteristics of the HfO2/SiO2 high-k gate dielectric stacks on Ge have been well investigated. It has been demonstrated that Si-O-Ge interlayer is formed on Ge surface during the in situ PEALD SiO2 depo...

Hafnium dioxide (HfO2) has a wide bandgap and high dielectric constant. We prepared ceramic coatings on Ti6Al4V alloys via plasma electrolytic oxidation (PEO) in an electrolyte with HfO2 particles. The influence of the particles microstructure, phase composition, elemental distribution, corrosion resistance PEO was systematically investigated. results showed that addition increased voltage (fro...

In the present study, the unit cells of metallic Hafnium (Hf), Hafnium Oxide (HfO2), and Titanium Nitride (TiN), which are the components of a novel Hf/HfO2/TiN three-layer stack with great potential for applications in nanoelectronics, are theoretically described by employing the plane wave pseudopotential approach as implemented in the Vienna Ab Initio Simulation Package (VASP). All the calcu...