This paper presents the design and simulation of a 5GHz monolithic low-noise amplifier integrated with an active Balun. Intended to WLAN applications, the fully integrated circuit was implemented in a 0.18μm CMOS technology. The simulations, optimized to noise performance, gain and minimum differential phase and magnitude error, were performed with BSIM3 model. Circuit simulations present 23dB ...

A newly proposed variable gain amplifier (VGA) topology is presented. The three-stage VGA offers a wide control gain range, which is independent on process variation, and is characterized by low-power, high linearity, wide range of control signal, and small chip size characteristics. The VGA is fabricated in 0.18μm CMOS technology and measurements show a gain variation of 83dB (-36~47dB) with a...

In this paper, a differential multi-band CMOS low noise amplifier (LNA), operated in a wide range from 800MHz~1700MHz, with wide-band interference rejection, linearity improvement and the capacitive cross-coupling technology, is proposed. The proposed differential multi-band CMOS low noise amplifier with high linearity performance and good interference rejection performance. The post-simulation...

An intermediate frequency (IF) variable gain amplifier (VGA) with exponential gain control for a radio receiver is fabricated in 0.25-μm CMOS technology. The techniques to improve the bandwidth and to reduce temperature dependence of gain are described. The complete VGA is composed of two stages of linearized transconductance VGA and three stages of fixed gain amplifier (FGA). The complete VGA ...

This paper presents a design of 2.4 GHz low noise amplifier (LNA) for wireless sensor network (WSN) applications using CMOS 0.13 μm Silterra process. The proposed LNA employs a self-biased inverter to obtain high gain and able to operate at low supply voltage. The simulation results indicated that the proposed LNA achieves an input return loss (S11) of -37.7 dB, output return loss (S22) of -28....

This report describes a sub-harmonic mixer for WCDMA applications. The circuit converts a 2 GHz RF signal directly to baseband using a 1 GHz LO frequency. The mixer uses common source MOSFETs with inductive degeneration to convert the input RF voltage to a current. This current is then steered using a switching network composed of triode-region MOSFETs that is driven with the LO and a 90 degree...

This paper presents an ultra-wideband (UWB) low noise amplifier (LNA) using two stage cascading topology to obtain high gain. Inductive degeneration and peaking inductor techniques are used to obtain wideband matching and flatness of gain. The proposed UWB LNA is implemented by using 180nm based CMOS TSMC technology using Advanced Design System (ADS) software.LNA achieves maximum gain of 15.5dB...

This paper presents a Sub-mW differential Common-Gate Low Noise Amplifier (CGLNA) for ZigBee standard. The circuit takes the advantage of shunt feedback and Dual Capacitive Cross Coupling (DCCC) to reduce power consumption and the bandwidth extension capacitors to support 2.4 GHz ISM band. An amplifier employing these techniques has been designed and simulated in 0.18 mm TSMC CMOS technology. T...

An ultra-wideband low noise amplifier for cognitive radio applications covering 50 MHz to 10 GHz is designed in a 65-nm CMOS technology. A three-stage dc-coupled common source amplifier with RC degeneration at the last stage optimizes the gain, linearity and output gain-phase balancing. Throughout the covered band, the simulated voltage gain is >23.3 dB whereas the noise figure is <3.4 dB. The ...

In this paper, a CMOS low power amplifier based on a high-quality active inductor and implemented by using 0.25-μm 1P5M CMOS standard technology is presented. The amplifier achieves power gain (S21) of 18dB within the -3dB cutoff frequency, bandwidth of 1.3GHz, and power consumption of 18mW under 2.5V power supply in 188 × 174μm silicon area. The input third-order intercept point (IIP3) and the...