The use of water-soluble sacrificial layer Sr$_3$Al$_2$O$_6$ has tremendously boosted the research on freestanding functional oxide thin films, especially thanks to its ultimate capability produce high-quality epitaxial perovskite films. However, costly single-crystalline substrates, e.g. SrTiO$_3$, were generally discarded after obtaining Here, we demonstrate that SrTiO$_3$ substrates can be r...

This article investigates high dielectric constant gate insulators for GaN-based devices. Exploiting TiO2 as a high-j insulator typically compromises leakage current and temperature stability of the film. In this work, the authors compare TiO2 mixed with either Al2O3 or HfO2 to form composite films Ti-Al-O and Ti-Hf-O, respectively, deposited by atomic layer deposition on both AlGaN/GaN and InA...

In this chapter, a novel titanium (Ti) alloy and foam suitable for biomedical applications will be introduced. As we know, Ti and its alloys are widely used as biomaterials especially for orthopedic implants in load bearing sites as dental and orthopedic implants and heart valves, due to their high mechanical properties, corrosion resistance and biocompatibility (Geetha et al., 2009). Pure Ti w...

Core-shell TiO(2)/C and TiC/C nanofibers are fabricated in situ on Ti and Al ion-implanted Ti substrates by a thermochemical reaction in acetone and the growth mechanism is described. Implantation of Al into Ti leads to in situ growth of TiC/C in lieu of TiO(2)/C nanofibers. This is because Al has a higher affinity to oxygen than Ti and Ti reacts preferentially with C to form TiC. The Ti foil s...

We report on the realization of record low resistance Ohmic contacts to MOVPE-grown heavily Si-doped $\beta$-Ga$_2$O$_3$ and $\beta$-(Al$_x$Ga$_1-x$)$_2$ O$_3$ epitaxial films. Transfer length measurement (TLM) patterns were fabricated homoepitaxial films with electron concentration (n) ranging from 1.77 3.23e20 cm^-3. Record specific contact total (Rc) 1.62e-7 Ohm.cm^2 0.023 Ohm.mm realized fo...

Excellent resistive switching memory characteristics were demonstrated for an Al/Cu/Ti/TaOx/W structure with a Ti nanolayer at the Cu/TaOx interface under low voltage operation of ± 1.5 V and a range of current compliances (CCs) from 0.1 to 500 μA. Oxygen accumulation at the Ti nanolayer and formation of a defective high-κ TaOx film were confirmed by high-resolution transmission electron micros...

For a simplicial complex 2 and coefficient domain F let F2 be the F-module with basis 2. We investigate the inclusion map given by : { [ _1+_2+_3+ } } } +_k which assigns to every face { the sum of the co-dimension 1 faces contained in {. When the coefficient domain is a field of characteristic p>0 this map gives rise to homological sequences. We investigate this modular homology for shellable ...

The Ti-6Al-6Mo alloy was arc-melted eight times from pure Ti, Al, and Mo. The Ti6Al-6Mo were analyzed by using an optical microscope, SEM-EDS, XRD and Vickers Hardness Tester. Corrosion test was performed by using Hank’s solution at 37 °C and pH 7.4. The optical micrograph showed a similar structure of this alloy. The microstructure of Ti 6Al6Mo was basketweave with  lath. The map of Ti, Al an...