In this paper, a two-stage 0.18 μm CMOS power amplifier (PA) for ultra-wideband (UWB) 3 to 5 GHz based on common source inductive degeneration with an auxiliary is proposed. proposal, used place the 2nd harmonic in core amplified order make up gain progression phenomena at main output node. Simulation results show of 16 dB flatness 0.4 and input 1 compression about -5 dBm from using 1.8 V suppl...

A theoretical method is developed to treat wideband pulsed squeezing in a traveling-wave parametric amplifier with group-velocity dispersion. Classical stochastic wave equations that are fully equivalent to operator equations of motion are developed and solved numerically. It is found that squeezing occurs over the entire phase-matching bandwidth, although the degree of squeezing decreases when...

Due to multicarrier propagation, newer transmission formats like WCDMA has high peak to average power ratio, which results the generation of IMD products at the output of the power amplifier (PA). To overcome this problem, we present a fast adaptive digital pre-distortion technique for Wideband Code Division Multiplexed systems by using Memory Polynomial function. The results show that the new ...

A fully-integrated 4.3-7 GHz CMOS low-voltage wideband low-noise amplifier with helical inductors has been demonstrated in this paper. The CMOS LNA, operating at a supply voltage as low as 1 V, achieves a small signal gain of 14 dB and 3-dB bandwidth from 4.3 to 7 GHz. The minimum noise figure is 2.9 dB at 6 GHz. With the benefits of helical inductors, the total effective chip size is only 0.2 mm.

Interest in SOI technology has been increased due to recent progress in modeling parasitic effects needed for analog IC design. In this paper a brief overview of the SOI technology is done. A user compiled model built for ADS is then described before the analysis of 2 RF designs: a wideband Low Noise Amplifier (300MHz-900MHz with more than 10dB gain and 5dBm IIP3) and an antenna switch (with 0....

A high power wideband feedback amplifier module using AlGaN/GaN high electron mobility transistor (HEMT) has been developed that covers the frequency range of DC to 5GHz with small signal gain of 9 dB. Shunt feedback topology is introduced by adding inductances to increase the bandwidth. At midband frequency, power added efficiency (PAE) of 20 % and saturation power level of 29.5 dBm were obtai...