In laser structures where the active region consists of several quantum wells, non-uniform charge injection can occur. We examine the consequences of non-uniform charge injection on gain, threshold current, and linewidth enhancement factor. Non-uniform charge injection in a InP-based multiple quantum well laser was considered in order to analyze effects on gain, threshold current, and linewidth...

Near-field optical spectroscopy and microscopy give access to excitations that cannot be revealed in the far zone. In order to investigate these remarkable differences, we present a theoretical analysis of the local optical properties of semiconductor quantum wells including the effects of disorder arising from interface fluctuations. The far-field absorption spectrum is compared with spatially...

Impact of short-range scattering on the metallic transport of strongly correlated two-dimensional holes in GaAs quantum wells" (2014).

The ambipolar diffusion length is measured in strained &Gal-&/InP quantum wells for several mole fractions in the interval 0.3 <X <0.8 by cathodoluminescence. The ambipolar diffusion length is found to have a significantly higher value in the lower indium mole fraction samples corresponding to tensile-strained wells. This longer diffusion length for the tensile samples is consistent with result...