نتایج جستجو برای: voltage stability margin
تعداد نتایج: 433600 فیلتر نتایج به سال:
Loadability limits are critical points of particular interest in voltage stability assessment, indicating how much a system can be stressed from a given state before reaching instability. Thus estimating the loadability margin of a power system is essential in the real time voltage stability assessment. A new methodology is developed based on Support Vector Regression (SVR) which is the most co...
In this paper a Super-Fast Low-Power (SFLP) static random access memory (SRAM) cell has been proposed. The SFLP cell contains two tail transistors in the pull-down path of the respective inverter to minimize the write power consumption The cell is simulated in terms of speed, power and read stability. The simulated results show that the read and write power of the proposed cell is reduced up to...
This report presents a low voltage, Nested Miller Compensation (NMC) topology. It consists of two non-inverting amplifiers for the first two stages and an inverting amplifier for the output stage. Two miller capacitors are used for stability of the circuit. This design is attractive in a way that it is a straight forward circuit without any complexity while achieving a high gain, high unity gai...
This paper proposes an efficient approach for the computation of voltage stability margin (VSM) in a large-scale power grid. The objective is to accurately and rapidly determine the load power margin which corresponds to voltage collapse phenomena. The proposed approach is based on the impedance match-based technique and the model-based technique. It combines the Thevenin equivalent (TE) networ...
Abstract With power grid heavy-load operation, and remote transmission distance which leads to voltage collapse, the method that combines continuous power flow (CPF) and improved differential evolution (IDE) algorithm is put forward to calculate a static voltage stability margin. First, we introduce mathematical model and CPF for solving the static voltage stability margin. And then, simulated ...
Today’s changing electric power systems create a growing need for flexibility, reliability, fast response and accuracy in the fields of electric power generation, transmission, distribution and consumption. Power system networks are complex systems that are nonlinear, disturbances and faults. It can be accomplished by improving the voltage profile, enhancement of voltage stability and by reduci...
Bias Temperature Instability (BTI) causes significant threshold voltage shift in MOSFET using Hafnium-dioxide (HfO2) High-k dielectric material. Negative BTI and Positive BTI are two types of BTI effects observed in p-channel and n-channel MOSFET. BTI affects the stability and reliability of conventional six transistor (6T) SRAM design in nano-scale CMOS technology. Eight transistor (8T) and Te...
Scaling of SRAM cell beyond 65-nm poses a serious threat to the stability of the cell and is a cause of major concern for the upcoming technologies. Due to random dopant fluctuation (RDF) and other process parameter variations, the cell turns out to be unstable. In this paper, an 8T (8Transistor) SRAM cell is proposed which offers enhanced data stability during read operation. While reading, th...
Among different protection schemes that save power system stability against a variety of disturbances, load shedding is considered as an effective and last-resort tool to avoid voltage instability. This paper proposes a special protection system design to minimize the load curtailments necessary to restore the equilibrium of operating point with relaxation of both steady state and dynamic restr...
To meet the ever increasing load demands in a power system and to satisfy the stability and reliability criteria, the existing transmission lines have been forced to operate closer to their security limits. As a result, several voltage instability incidents have been reported all over the globe. One of the major being the voltage collapse problems in power systems which have been a permanent co...
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