In order to reduce the effort needed to create self-separated, freestanding gallium nitride (GaN) layers by thick growth in hydride vapor phase epitaxy (HVPE), we established a two-step facet-controlled lateral overgrowth (FACELO) process in HVPE. Just as for the metalorganic vapor phase epitaxy (MOVPE) FACELO process, the template is produced by MOVPE growth directly on sapphire. This initial ...

At the impact of a liquid droplet on a smooth surface heated above the liquid's boiling point, the droplet either immediately boils when it contacts the surface ("contact boiling"), or without any surface contact forms a Leidenfrost vapor layer towards the hot surface and bounces back ("gentle film boiling"), or both forms the Leidenfrost layer and ejects tiny droplets upward ("spraying film bo...

We prepared 2”-GaN wafers as templates for a self separation process which is happening during cooldown after growing thick layers of GaN in our hydride vapor phase epitaxy (HVPE) reactor. Our templates process starts with GaN grown by metalorganic vapor phase epitaxy (MOVPE) directly on sapphire. These GaN layers are getting masked with 200nm of SiN that is structured by means of optical litho...

Mots-clé PVD-CVD, Sol-gel processing, Monte Carlo simulation, thin film islanding. PACS 04A25 The synthesis of self-organized quantum dots (QD’s) can be achieved through bottom up layer by layer deposition processes as chemical vapor deposition (CVD) or physical vapor deposition (PVD). However, QD’s may also be synthesized via sol-gel route, which involves a spontaneous evolution from thin film...

Uniform epitaxial CoSi2 layers have been grown in situ on a ~100! Si substrate at temperatures above 600 °C by reactive chemical-vapor deposition of cyclopentadienyl dicarbonyl cobalt, Co~h-C5H5!~CO!2 . Co-rich phases such as Co2Si and CoSi were suppressed during cobalt metallorganic chemical-vapor deposition at substrate temperatures above 500 °C. A thin carbon layer was found on the top of th...

We present our results of (202̄1) GaN growth on (224̄3) patterned sapphire substrates. The substrates are patterned by etching trenches with c-plane-like side-facets. On these facets, the metalorganic vapor phase epitaxy (MOVPE) GaN growth starts in c-direction and forms triangularly shaped stripes eventually coalescing to a (202̄1) oriented layer. Xray rocking curves measured parallel to the stri...

Surface and structural damage to plasma-facing components (PFCs) due to the frequent loss of plasma con®nement is a serious problem for the tokamak reactor concept. The plasma energy deposited on these components during loss of con®nement causes signi®cant surface erosion, possible structural failure, and frequent plasma contamination. Surface damage consists of vaporization, spallation, and li...

We report a low-temperature process for covalent bonding of thermal SiO2 to plasma-enhanced chemical vapor deposited (PECVD) SiO2 for Si-compound semiconductor integration. A record-thin interfacial oxide layer of 60 nm demonstrates sufficient capability for gas byproduct diffusion and absorption, leading to a high surface energy of 2.65 J/m after a 2-h 300 C anneal. O2 plasma treatment and sur...

In order to establish the growth of nonpolar GaN templates for subsequent overgrowth via hydride vapor phase epitaxy (HVPE) or subsequent device epitaxy we studied the growth of a-plane oriented samples on r-plane sapphire via metal organic vapor phase epitaxy (MOVPE). The growth parameters like reactor pressure, growth temperature and V/IIIratio for the nucleation layer as well as for the GaN ...

Plasma enhanced chemical vapor deposition (PECVD) is a versatile technique to obtain vertically densealigned carbon nanotubes (CNTs) at lower temperatures than chemical vapor deposition (CVD). In this work, we used magnetron sputtering to deposit iron layer as a catalyst on silicon wafers. After that, radio frequency (rf) assisted PECVD reactor was used to grow CNTs. They were treated with wate...