نتایج جستجو برای: v 100
تعداد نتایج: 699543 فیلتر نتایج به سال:
The monitoring of crops is of vital importance for food and environmental security in a global and European context. The main goal of this study was to assess the crop mapping performance provided by the 100 m spatial resolution of PROBA-V compared to coarser resolution data (e.g., PROBA-V at 300 m) for a 2250 km test site in Bulgaria. The focus was on winter and summer crop mapping with three ...
Near-future upgrades of intra data center networks and high-performance computing systems would require optical interconnects capable operating at beyond 100 Gbps/lane. In order for this evolution to be achieved in a sustainable way, high-speed yet energy-efficient transceivers are need. Towards direction we have previously demonstrated directly-modulated lasers (DMLs) 50 Gbps/lane with sub-pJ/...
OBJECTIVE To compare responses of patients with cancer with those of a matched control group, cancer specialists, general practitioners, and cancer nurses in assessing personal cost-benefit of chemotherapy. DESIGN Prospective study of consecutively recruited patients with cancer and other groups by questionnaire; half of the patients received the questionnaire again three months after startin...
A 100-V Taper-Shielded trench Gate (TSG) power metal-oxide-semiconductor field-effect transistor (MOSFET) with superior figure-of-merit (FOM) is proposed and investigated in this paper. The gate of the TSG-MOSFET has a tapered shape to reduce gate-to-drain overlap capacitance (CGD) charge (QG). vertical drift region doping profile enhanced two ways. First use multi-step epitaxial growth produce...
This paper investigates the origins of sub-threshold slope degradation in vertical MOSFETs (v-MOSFETs) due to dry etching of the polysilicon surround gate. Control v-MOSFETs exhibit a degradation of subthreshold slope as the channel length is reduced from 250 to 100 nm, with 100 nm transistors having a value of 125 mV/dec and a DIBL of 210 mV/V. The effect of the polysilicon gate etch is invest...
In one of my first papers before the National Academy of Sciences' I showed by six drawings the operation of an Ionic Centrifuge in two types of discharge. The first three are shown correctly with negatively polarized end plates and insulated cylinder. The last three are shown incorrectly with the end plates voltage marked positive. But the current shown is due to the excess of positive ions ov...
Fifteen National Metrology Institutes have participated in dc voltage ratio comparison CCEM-K8. The method followed to normalize the participants’ results, the calculation of the key comparison reference values and the comparison results are reported for the two mandatory ratios of the comparison, 1000 V/10 V and 100 V/10 V.
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