Articles you may be interested in Possible unified model for the Hooge parameter in inversion-layer-channel metal-oxide-semiconductor field-effect transistors J. Threshold voltage modeling under size quantization for ultra-thin silicon double-gate metal-oxide-semiconductor field-effect transistor GaN metal-oxide-semiconductor field-effect transistor inversion channel mobility modeling Modeling ...

This work presents a new artificial neural network (ANN) model formulation for RF high-power transistors which includes the S-parameters of active device. improves small-signal extrapolation capability, and OFF-state impedance approximation, making it suitable Doherty power amplifier (DPA) design. capability plays key role in correct load modulation prediction, since, at low levels, peaking PA ...

VARMA, AMBRISH KANT. Improved Behavioral Modeling Based on the Input Output Buffer Information Specification. (Under the direction of Professor Paul D. Franzon). High level behavioral modeling is widely used in lieu of low level transistor models to ascertain the behavior of I/O drivers and receivers. IBIS (Input Output Buffer Information Specification) is one of the most widely used methodolog...

Title of dissertation: CHARACTERIZATION OF METAL-OXIDE-SEMICONDUCTOR STRUCTURES AT LOW TEMPERATURES USING SELF-ALIGNED AND VERTICALLY COUPLED ALUMINUM AND SILICON SINGLE-ELECTRON TRANSISTORS Luyan Sun, Doctor of Philosophy, 2008 Dissertation directed by: Dr. Bruce E. Kane Department of Physics I incorporate an Al-AlOx-Al single-electron transistor (SET) as the gate of a narrow (∼ 100 nm) metal-...

In this paper, we present a new composite transistor circuit design technique that provides superior performance enhancement to analog circuits. By adding a composite transistor to the cascode-compensated amplifier, it has achieved a 102 dB DC gain, and a 37.6 MHz unity gain bandwidth while driving a 2 nF heavy capacitive load at a single 1.8 V supply. In the comparison of power-bandwidth and p...

Soft materials can be used as the building blocks for electronic devices with extraordinary properties. We introduce a theoretical model for a field-effect transistor in which ions are the gated species instead of electrons. Our model incorporates readily-available soft materials, such as conductive porous membranes and polymer-electrolytes to represent a device that regulates ion currents and ...

In this paper, a frequency-variation based method has been proposed for transistor parameter estimation in a commonemitter transistor amplifier circuit. We design an algorithm to estimate the transistor parameters, based on noisy measurements of the output voltage when the input voltage is a sine wave of variable frequency and constant amplitude. The common emitter amplifier circuit has been mo...

In this paper, we describe the complete MOSFET model developed for circuit simulation. The model describes all transistor characteristics as functions of surface potentials, which are calculated iteratively at each applied voltage under the charge-sheet approximation. The key idea of this development is to put as much physics as possible into the equations describing the surface potentials. Sin...

Snapback breakdown is the second order effect of avalanche breakdown in a device. Snapback occur when the excess supply voltage and high currents created flow through the device and become unstable. These two breakdowns are used to explain the concept of Vertical Impact Ionization MOSFET (IMOS) in its Equivalent Circuit Model. The equivalent circuit model design consists of MOS transistors that...