نتایج جستجو برای: tunneling field effect
تعداد نتایج: 2345540 فیلتر نتایج به سال:
During the past two decades, there have been tremendous developments in near-field imaging and local probing techniques. Examples are the Scanning Tunneling Microscope (STM), Atomic Force Microscope (AFM), Near-field Scanning Optical Microscope (NSOM), Photon Scanning Tunneling Microscope (PSTM), and Scanning Thermal Microscope (SThM).Results showed that the average reflectance for a dopant con...
The influence of a magnetic field on the tunneling of an electron out of a confining plane is studied by a path integral method. We map this 3-d problem on to a 1-d one, and find that the tunneling is strongly affected by the field. Without a perpendicular field the tunneling at zero temperature can be completely suppressed by a large parallel field, but in the small parallel field and low temp...
Spin-resolved scanning tunneling microscopy is employed to quantitatively determine the spin polarization of the magnetic field-split Kondo state. Tunneling conductance spectra of a Kondo-screened magnetic atom are evaluated within a simple model taking into account inelastic tunneling due to spin excitations and two Kondo peaks positioned symmetrically around the Fermi energy. We fit the spin ...
We study the behaviour of scalar fields on background geometries which undergo quantum tunneling. The two examples considered are a moving mirror in flat space which tunnels through a potential barrier, and a false vacuum bubble which tunnels to form a black hole. WKB approximations to the Schrödinger and Wheeler-DeWitt equations are made, leading one to solve field equations on the Euclidean m...
The symmetry of magnetic quantum tunneling has been studied in the prototype single molecule magnet Mn12-acetate using a micro-Hall effect magnetometer and superconducting high field vector magnet system. An average crystal fourfold symmetry is shown to be due to local molecular environments of twofold symmetry that are rotated by 90 degrees with respect to one another, confirming that disorder...
The standard tunneling model describes quite satisfactorily the properties of amorphous solids at temperatures T < 1K in terms of an ensemble of two-level systems including the logarithmic temperature dependence of the dielectric constant. Yet, experiments have shown that at ultralow temperatures T< 5 mK such a temperature behavior breaks down and the dielectric constant becomes temperature ind...
field ion microscopy (fim) and scanning tunneling microscopy (stm) have found a wide application in nanotechnology. these microscopes use a metallic nanotip for image acquisition. resolution of fim and stm images depends largely on the radius of nanotip apex; the smaller the radius the higher the resolution. in this research, for tungsten nanotip fabrication, electrochemical etching of tungsten...
The interface between organic semiconductor and graphene electrode, especially the structure of the first few molecular layers at the interface, is crucial for the device properties such as the charge transport in organic field effect transistors. In this work, we have used scanning tunneling microscopy to investigate the poly (3-octyl-thiophene) (P3OT)-graphene interface. Our results reveal th...
In the past few years the phenomenon of spin dependent tunneling (SDT) in magnetic tunnel junctions (MTJs) has aroused enormous interest and has developed into a vigorous field of research. The large tunneling magnetoresistance (TMR) observed in MTJs garnered much attention due to possible application in random access memories and magnetic field sensors. This led to a number of fundamental ques...
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