Anti-Brownian electrokinetic traps have been used to trap and study the free-solution dynamics of large protein complexes and long chains of DNA. Small molecules in solution have thus far proved too mobile to trap by any means. Here we explore the ultimate limits on trapping single molecules. We developed a feedback-based anti-Brownian electrokinetic trap in which classical thermal noise is com...

We report on an empirically based physical model developed for small-molecule organic thin film transistors (OTFTs). The model is an extension of an adapted MOSFET model for hydrogenated amorphous silicon TFTs accounting for an arbitrary energy distribution of mobile and trap states and allows the extraction of the parameters from the measured device characteristics. Ideally all parameters can ...

0026-2714/$ see front matter 2012 Elsevier Ltd. A http://dx.doi.org/10.1016/j.microrel.2012.07.011 ⇑ Corresponding author. Tel.: +55 51 81002315; fax E-mail address: [email protected] (G. Wirth). A new methodology for circuit level transient simulation of Random Telegraph Noise (RTN) is proposed. The physically based methodology properly models the microscopic phenomena involved in RTN, includ...

In this work, we propose a novel technique of fabricating germanium nanocrystal quasi-nonvolatile memory device. The device consists of a MOSFET with Ge charge-traps embedded within the gate dielectric. This trap-formation method provides for precise control of the thicknesses of the oxide layers which sandwich the charge-traps, via thermal oxidation. Memory devices with write/erase speed/volta...

An autoinoculative device was used to test the ability of sap beetles (Coleoptera: Nitidulidae) to carry a specific strain of Beauveria bassiana (Balsamo) Vuillemin to overwintering sites in a multiyear field study. The device was baited with the pheromone and coattractants for the dusky sap beetle (Carpophilus lugubris Murray) and placed in the field in the fall of each year. The introduced st...

Large dynamic on-resistance due to a trap at EC-2.0 eV is observed in industry-supplied AlGaN/GaN MISHEMTs. This trap is likely in the GaN buffer and possibly related to carbon. AlGaN/GaN metal-insulator-semiconductor high electron mobility transistors (MISHEMTs) for high voltage switching applications are promising due to the ability to simultaneously achieve high breakdown voltage and low on-...

During the development of a severe accident at nuclearpower plantwith core melting, corium is formed. One main barriers preventing outflow into environment melt localization device or trap. The trap must accept and prevent parameters from exceeding critical values, ensuring its retention in controlled volume cooling. For this reason, traps are subject to serious requirements regarding cooling m...

The choice of the ideal material employed in selector devices is a tough task both from theoretical and experimental side, especially due to lack synergistic approach between techniques able correlate specific properties with device characteristics. Using material-to-device multiscale technique, reliable protocol for an efficient characterization active traps amorphous GeSe chalcogenide propose...