The luminescent and recombination properties of V-pit defects in p-GaN(Mg) grown by metalorganic chemical vapor deposition (MOCVD) were studied scanning electron microscopy (SEM) the secondary electron, cathodoluminescence (CL), beam induced current (EBIC) modes, combined with CL spectra measurements EBIC collection efficiency measurements. Similar studies performed on low-dislocation-density f...

Abstract REBCO (REBa 2 Cu 3 O 7− δ ) coated conductor with J e > 1000 A/mm at operating condition is being utilized in fusion and high-field-magnet applications. We have demonstrated short samples an engineering current density ( ~ 4,600 (based on 0.1 mm thick tape) 4.2 K, 20 T using Advanced Metal-Organic Chemical Vapor Deposition (A-MOCVD). In order to achieve such high performance uniform...

Title of Document: COMPLEX METAL OXIDE THIN FILM GROWTH BY METALORGANIC CHEMICAL VAPOR DEPOSITION Seung-Yeul Yang, Doctor of Philosophy, 2005 Directed By: Professor Ramamoorthy Ramesh, Department of Materials Science and Engineering The phenomenon of ferroelectricity recently attracted great attention with the successful advances in the development of thin-film fabrication. This development ena...

We successfully accomplished the conformal growth of sp2-hybridized few-layer h-BN over an array Si-based nanotrenches with a 45 nm pitch and aspect ratio ?7:1 by using pulsed-mode metal–organic chemical vapor deposition (MOCVD) method. Surface-sensitive X-ray absorption fine structure spectroscopy density functional theory calculations revealed that B–O bonds formed on noncatalytic SiO2 surfac...

The hot-wall metalorganic chemical vapor deposition (MOCVD) concept, previously shown to enable superior material quality and high performance devices based on wide bandgap semiconductors, such as Ga(Al)N SiC, has been applied the epitaxial growth of β-Ga 2 O 3 . Epitaxial layers at rates (above 1 μm/h), low reagent flows, reduced temperatures (740 °C) are demonstrated. A crystalline a c-plane ...

We use hybrid density functional calculations to assess n-type doping in monoclinic (Al$_x$Ga$_{1-x}$)$_2$O$_3$ alloys. focus on Si, the most promising donor dopant, and study structural properties, formation energies charge-state transition levels of its various configurations. also explore impact C H, which are common impurities metal-organic chemical vapor deposition (MOCVD). In Ga$_2$O$_3$,...