نتایج جستجو برای: strained molecules
تعداد نتایج: 198218 فیلتر نتایج به سال:
A new derivative of the strained 3,3,6,6-tetramethylthiacycloheptyne (TMTH) bearing a functional handle is reported. Following an optimized synthesis, the handle was introduced by mild alkylation of the sulphur atom. The resulting functionalized strained 4,5-didehydro-3,3,6,6-tetramethyl-2,3,6,7-tetrahydrothiepinium (TMTI) proved to be stable and underwent extremely fast [3+2] cycloaddition rea...
Driven by the ever-increasing pace of drug discovery and the need to push the boundaries of unexplored chemical space, medicinal chemists are routinely turning to unusual strained bioisosteres such as bicyclo[1.1.1]pentane, azetidine, and cyclobutane to modify their lead compounds. Too often, however, the difficulty of installing these fragments surpasses the challenges posed even by the constr...
Self-ordering growth of nanoarrays on strained metallic interfaces is an attractive option for preparing highly ordered nanotemplates. The great potential of this natural templating approach is that symmetry, feature sizes, and density are predicted to depend on the interfacial stress in these strained layers, which can be adjusted by changing the substrate-thin film composition, temperature, a...
One of the principal economic drivers for the semiconductor industry is high performance, low power applications for the portable electronics consumer market. Unfortunately, the power dissipation resulting from the use of conventional CMOS technology in this area is becoming a critical design issue. Supply voltage reduction has been the preferred technique for reducing power dissipation. Howeve...
A review of recent progress in the field of strained silicon photonics is presented. The application of strain to waveguide and photonic crystal structures can be used to alter the linear and nonlinear optical properties of these devices. Here, methods for the fabrication of strained devices are summarized and recent examples of linear and nonlinear optical devices are discussed. Furthermore, t...
The strain-induced modifications of the orbital components of the valence-band wave functions in strained GaAs quantum wells grown on GaP substrates and strained InAs quantum wells grown on GaAs substrates are studied. The relative weight of the orbital components is analyzed by comparing the piezoreflectance and the derivative of the reflectance spectra. Depending on the localization of the wa...
Based on comprehensive calibration to experimental device characteristics, Monte Carlo simulations have been performed to assess the device performance of sub100nm Si and strained Si MOSFETs with high-κ dielectrics, with and without consideration of soft optical phonon scattering induced by the introduction of high-κ dielectrics. The impact of interface roughness scattering on the performance e...
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