The evolution of zinc oxide nanostructures grown on graphene by alcohol-assisted ultrasonic spray pyrolysis was investigated. The evolution of structures is strongly depended on pyrolysis parameters, i.e., precursor molarity, precursor flow rate, precursor injection/deposition time, and substrate temperature. Field-effect scanning electron microscope analysis, energy dispersive X-ray spectrosco...

Zinc Sulfide (ZnS) is important II-VI semiconductors material for the development of various modern technologies and photovoltaic applications. ZnS thin film was prepared by using chemical spray pyrolysis technique. The spray solutions contains ZnCl2 and SC(NH2)2 with molar concentration 0.1M/L. ZnS thin films was growth onto hot glass substrates at substrates temperature 400C. The Structure of...

ABSTRACT The II-VI group semiconductors are of great importance due to their applications in various opto electronic devices. Among these semiconductor. Zinc sulphide is the most suitable for its utility in opto electronic devices. Zinc Sulphide has been prepared on glass substrate by using Spray Pyrolysis method. The optical properties of these films have been studied in the wavelength range 3...

Nanostructured SnO2 thin films were prepared by ultrasonic spray pyrolysis technique. Aqueous solution (0.05M) of SnCl4·5H2O in double distilled water was chosen as the starting solution for the preparation of the films. The stock solution was delivered to nozzle with constant and uniform flow rate of 70 ml/h by Syringe pump SK5001. Sono-tek spray nozzle, driven by ultrasonic frequency of 120 k...

Our work consists in depositing the copper oxide Fe doped CuO films by spray obtained from solution of chloride CuCl2 and FeCl2 with a percentage 2, 4; 6 8%, on glass substrates at temperature 3500c. The thin are characterized X-ray diffraction, visible UV spectroscopy four-point technique.With high peak intensity is for preferential orientations (002) (111), this increases as doping rate gives...