Electron transport in nanoscale structures is strongly influenced by the Coulomb interaction that gives rise to correlations in the stream of charges and leaves clear fingerprints in the fluctuations of the electrical current. A complete understanding of the underlying physical processes requires measurements of the electrical fluctuations on all time and frequency scales, but experiments have ...

Unlike red and green quantum dot light-emitting diodes (QLEDs), it is not clear whether a blue QLED an electron-dominated device. In this work, we identify that electron over-injected in QLEDs by impedance spectroscopy. By analyzing the capacitance–voltage characteristics of single-carrier devices, find built-in voltage electron-only device smaller than hole-only Therefore, injection more effic...

This paper presents a basic block for building large-scale single-electron neural networks. This macro block is completely composed of SET inverter circuits. We present and discuss the basic parts of this device. The full design and simulation results were done using MATLAB and SIMON, which are a single-electron tunnel device and circuit simulator based on a Monte Carlo method. Special measures...

Most III-V nitride light emitting diodes have an n-type down structure with Ga polarity. In such a device, the active layer is grown on top of the n-cladding layer and the p-type cladding layer is grown on top of the active layer. We have analyzed the band structure of such a device and found a reduced effective conduction band barrier due to the positive spontaneous and piezoelectric polarizat...

in this paper, we examine the effect of the energy difference between the l- and the -valleys in compound semiconductor materials, carrier effective mass, and the scattering processes on the electron transport characteristics in mesfets. to do this, we use the monte carlo simulation to demonstrate the superiority of the ingaas mesfet, made on a semi-insulating inp substrate, over both inp and ...

The detailed operation of an electron spin entangler is studied, using density matrix equations. The device is made of a superconductor, two quantum dots and two normal leads. The treatment takes into account coherent tunneling in a non-perturbative way, and analyzes the various parasitic effects, in addition to the main process (crossed Andreev reflection) : those include singlet pairs passing...

Much research is currently being carried out in the field of nanoelectronic circuit design [1], [2]. One of the proposed quantum devices is the Single Electron Tunneling (SET) device. This SET device consists of a tunnel junction, through which only an integer number of electrons can tunnel. A new local tunnel condition will be derived in this paper. The derivation is based on the discrete char...