We show that the hereditary discrepancy of a hypergraph F on n points increases by a factor of at most O(log n) when one adds a new edge to F . Let X be a set of n points. We say that a hypergraph F on X has discrepancy h if h is the smallest integer satisfying the following: There is a coloring χ: X → {−1, +1} such that for every edge S ∈ F , |χ(S)| ≤ h, where we write χ(S) for ∑ x∈S χ(x). The...

to calculation non-bonded interaction of the [cocl6]3- complex embedded in nano ring, we focus on the single wall boron-nitride b18n18 nano ring. thus, the geometry of b18n18 nano ring has been optimized by b3lyp method with epr-ii (electron paramagnetic resonance) basis set and geometry of the [cocl6]3- complex has been optimized at b3lyp method with aldrich’s vtz basis set and stuttgart rsc 1...

Our research concerns the design of a widget set that directly supports Single Display Groupware (SDG) applications that have Multiple Input Devices (MID). In this paper, we present some of the issues related to SDG development and describe why existing widgets and interface components are not appropriate to SDG application. Because this work is still in its early stages, no solutions are prese...

Abstract— The ability to control the transport of individual electrons in Single Electron Tunneling (SET) based circuits creates the conditions for Single Electron Encoded Logic (SEEL). The logic values and of SEEL gates are encoded as a net charge of or electron charges. This paper investigates the implementation of SEEL memory elements based on SEEL Boolean logic gates. After the introduction...

Recent research in SET gives new ideas which are going to revolutionize the random access memory and digital data storage technologies. The goal of this paper is to discuss about the basic physics, applications of nano electronic device ‘Single electron transistor [SET]’ which is capable of controlling the transport of only one electron. Single-electron transistor (SET) is a key element of curr...

We study very small gated SOI nanowires defined by e-beam lithography. Electrical transport at low temperature (below ≈ 10K) is dominated by Coulomb blockade. In the metallic regime at high Vg very periodic oscillations are recorded and the measured period corresponds to the whole surface of wire covered by the gate. Below the threshold the energy level quantization is clearly seen. The interpl...