Abstract. Magnetic properties of Lu2Co17-xSix single crystals grown by the Czochralski method were investigated. The homogeneity range of Si substitution for Co extends up to x = 3.4. The unit cell volume, V, Curie temperature, TC, and spontaneous magnetic moment, Ms, decrease monotonously with increasing Si content. Upon Si substitution, the spin-reorientation transition occurring in Lu2Co17 a...

The effects of ex-situ annealing in a N2 ambient on the properties of GaAs/GaAsSbN/GaAs core-multi-shell nanowires on Si (111) substrate grown by self-catalyzed molecular beam epitaxy (MBE) are reported. As-grown nanowires exhibit band edge emission at ~0.99 eV with a shoulder peak at ~0.85 eV, identified to arise from band tail states. A large red shift of 7 cm(-1) and broadened Raman spectra ...

BACKGROUND Behavioral paradigms applied during human recordings in electro- and magneto- encephalography (EEG and MEG) typically require 1-2 hours of data collection. Over this time scale, the natural fluctuations in brain state or rapid learning effects could impact measured signals, but are seldom analyzed. METHODS AND FINDINGS We investigated within-session dynamics of neocortical alpha (7...

2014 Total hydrogen content and its distribution among SiH, SiH2 and other H’ sites of sputtered a-Si : H films vary after posthydrogenation but the dangling bond concentrations remain constant. This can be explained by preferential H diffusion in the tissue zone where most of the hydrogen is located, while the residual dangling bonds are in the islands. The photoconductivity is controlled by s...

The direct redox reaction (galvanic displacement) between Pd(2+) and substrate Si was used to deposit Pd on Si, and the Pd-Si catalysts enabled a chemoselective hydrogenation of para-chloronitrobenzene with the selectivity for para-chloroaniline higher than 99.9% at complete conversion of para-chloronitrobenzene.

Relaxation and dephasing of hole spins are measured in a gate-defined Ge/Si nanowire double quantum dot using a fast pulsed-gate method and dispersive readout. An inhomogeneous dephasing time T2* 0.18 μs exceeds corresponding measurements in III–V semiconductors by more than an order of magnitude, as expected for predominately nuclear-spin-free materials. Dephasing is observed to be exponential...

We designed and fabricated binder-free, 3D porous silicon nanostructures for Li-ion battery anodes, where Si nanoparticles electrically contact current collectors via vertically grown silicon nanowires. When compared with a Si nanowire anode, the areal capacity was increased by a factor of 4 without having to use long, high temperature steps under vacuum that vapour-liquid-solid Si nanowire gro...

Nanowire-based ferroelectric-complementary metal-oxide-semiconductor (NW FeCMOS) nonvolatile memory devices were successfully fabricated by utilizing single n- and p-type Si nanowire ferroelectric-gate field effect transistors (NW FeFETs) as individual memory cells. In addition to having the advantages of single channel n- and p-type Si NW FeFET memory, Si NW FeCMOS memory devices exhibit a dir...

Large-area, vertically aligned silicon nanowires with a uniform diameter along the height direction were fabricated by combining in situ-formed anodic aluminum oxide template and metal-assisted chemical etching. The etching rate of the Si catalyzed using a thick Au mesh is much faster than that catalyzed using a thin one, which is suggested to be induced by the charge transport process. The thi...

We demonstrate that x-ray irradiation can be used to induce an insulator–metal transition in Si-doped Al0.35Ga0.65As, a semiconductor with DX centers. The excitation mechanism of the DX centers into their shallow donor state was revealed by studying the photoconductance along with fluorescence. The photoconductance as a function of incident x-ray energy exhibits an edge both at the Ga and As K ...