نتایج جستجو برای: silicon film

تعداد نتایج: 166952  

2015
Chien-Fu Fong Ching-Liang Dai Chyan-Chyi Wu

A methanol microsensor integrated with a micro heater manufactured using the complementary metal oxide semiconductor (CMOS)-microelectromechanical system (MEMS) technique was presented. The sensor has a capability of detecting low concentration methanol gas. Structure of the sensor is composed of interdigitated electrodes, a sensitive film and a heater. The heater located under the interdigitat...

Journal: :journal of nanostructures 2012
a. bahari

the main impetus for our research is provided by the growing interest worldwide in ultra thin silicon dioxide on silicon based nano devices. the obvious need for better knowledge in the ultra thin gate silicon dioxides, is motivated both by interests in fundamental research and phenomenology as well as by interests in possible applications, which can be found with better fitting of experimental...

2014
Tien-Fu Chen Ching-Fa Yeh Jen-Chung Lou

Articles you may be interested in Anomalous hot-carrier-induced degradation of offset gated polycrystalline silicon thin-film transistors Appl. Reliability of laser-activated low-temperature polycrystalline silicon thin-film transistors Appl. Erratum: " Effect of excimer laser annealing on the structural and electrical properties of polycrystalline silicon thin-film transistors " [J. Effect of ...

2003
Kishan Gupta Hyuck Choo Hanjun Kim Richard S. Muller

We have built and characterized batch-processed polarization beam splitters (PBS), important optical components to separate the orthogonal TE and TM components of light. The devices were fabricated from thin-film, low-stress silicon nitride membranes and showed excellent performance. By stacking membranes, and a triple-layer PBS produced extinction ratios of 21 and 16dB for reflected and transm...

Journal: :Nanoscale 2016
G Köppel B Rech C Becker

Recent progresses in liquid phase crystallization enabled the fabrication of thin wafer quality crystalline silicon layers on low-cost glass substrates enabling conversion efficiencies up to 12.1%. Because of its indirect band gap, a thin silicon absorber layer demands for efficient measures for light management. However, the combination of high quality crystalline silicon and light trapping st...

2011
Joseph M. Jacobson David E. Hardt Kimin Jun

This thesis presents an integrated study of high efficiency photoanodes for water splitting using silicon and iron-oxide. The fundamental limitations of silicon to water splitting applications were overcome by an ultrathin iron-oxide film stack and a pH-adjusted electrochemical environment. It was experimentally demonstrated that this functional photoanode has very strong photoactivity exceedin...

2001
Toshio Kamiya Yong T. Tan Yoshikazu Furuta Hiroshi Mizuta Zahid A.K. Durrani Haroon Ahmed

Carrier transport was investigated in two different types of ultra-thin silicon films, polycrystalline silicon (poly-Si) films with large grains > 20 nm in size and hydrogenated nanocrystalline silicon (nc-Si:H) films with grains 4 nm – 8 nm in size. It was found that there were local non-uniformities in grain boundary potential barriers in both types of films. Single-electron charging effects ...

Journal: :journal of medical signals and sensors 0
keyvan jabbari somayeh senobari mahnaz roayaei masoumeh rostampour

the cancer of oral cavity is related to lesions of mucous membrane of tongue and gum that can be treated with radiation therapy. a lateral photon field can be used to treat this kind of tumor, which has a side‑effect on normal tissue in the opposite side of the oral cavity. in this study the dosimetric effect of the various shields in oral cavity is evaluated. in this study, a special phantom s...

2010
Isaac Chan Ryan Cheng Hua-Chi Cheng Cheng-Chung Lee Ting Liu Bahman Hekmatshoar Yifei Huang Sigurd Wagner James C. Sturm

We have developed low-defect, low-stress plasma-enhanced chemical vapor deposition (PECVD) silicon nitride (SiNx) at 200°C. The intrinsic stress of this SiNx film is only -12.9 MPa (compressive). Coupled with the low defect (low charge trapping) characteristic of this low-stress SiNx, we are able to demonstrate amorphous silicon thin-film transistors (a-Si TFTs) with nearly threefold increase i...

2007
S. Ponoth P. D. Persans R. Ghoshal N. Agarwal J. Plawsky A. Filin Q.-Z. Fang

We introduce a new class of siloxane-based epoxy polymers for thin film optical waveguide applications. The thickness of spun-on films can be controlled by varying either spin speed or viscosity using solvents. Cured films exhibit excellent adhesion to silicon oxide and Al and excellent thermal and chemical stability. Waveguides of ~ 2 micron thickness on silicon oxide exhibit <0.2 dB/cm loss a...

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