We explore the use of Si3N4/Si substrates as a substitute of the standard SiO2/Si substrates employed nowadays to fabricate nanodevices based on 2D materials. We systematically study the visibility of several 2D semiconducting materials that are attracting a great deal of interest in nanoelectronics and optoelectronics: MoS2, MoSe2, WSe2 and black-phosphorus. We find that the use of Si3N4/Si su...

Parallel molecular dynamics simulations are performed to determine atomic-level stresses in Si(111)/Si(3)N4(0001) and Si(111)/a-Si3N4 nanopixels. Compared to the crystalline case, the stresses in amorphous Si3N4 are highly inhomogeneous in the plane of the interface. In silicon below the interface, for a 25 nm square mesa stress domains with triangular symmetry are observed, whereas for a recta...

Nanofabricated photonic materials offer opportunities for crafting the propagation and dispersion of light in matter. We demonstrate an experimental realization of a two-dimensional negative-index material in the blue-green region of the visible spectrum, substantiated by direct geometric visualization of negative refraction. Negative indices were achieved with the use of an ultrathin Au-Si3N4-...

We observe strong modal coupling between the TE00 and TM00 modes in Si3N4 ring resonators revealed by avoided crossings of the corresponding resonances. Such couplings result in significant shifts of the resonance frequencies over a wide range around the crossing points. This leads to an effective dispersion that is one order of magnitude larger than the intrinsic dispersion and creates broad w...

Amorphous silicon oxide (a-SiO2) and nitride (a-Si3N4) are two key dielectrics in microelectronic silicon devices [1]. The dominant dielectric used currently in silicon devices is a-SiO2 [1,2]. Application of silicon oxide for future devices will be impeded by several fundamental limitations which lead to low reliability of semiconductor devices and to the necessity of alternative dielectrics [...

The water content of phosphoric acid in etching silicon nitride and silicon dioxide plays an important role. An increase in water content increases the etch rate of silicon nitride and decreases the etch rate of silicon dioxide. The highest possible temperature for a fixed water content at atmospheric pressure in the system H2O-P2O5 is realized by boiling the liquid and refluxing the vapor phas...

We demonstrate a time-efficient and low-cost approach to fabricate Si3N4 coated nanodome structures in fluorescent SiC. Nanosphere lithography is used as the nanopatterning method and SiC nanodome structures with Si3N4 coating are formed via dry etching and thin film deposition process. By using this method, a significant broadband surface antireflection and a considerable omnidirectional lumin...

We demonstrate planar Si3N4 ring resonators with ultra-high quality factors (Q) of 19 million, 28 million, and 7 million at 1060 nm, 1310 nm, and 1550 nm, respectively. By integrating the ultra-low-loss Si3N4 ring resonators with laterally offset planar waveguide directional couplers, optical add-drop and notch filters are demonstrated to have ultra-narrow bandwidths of 16 MHz, 38 MHz, and 300 ...

Si3N4/BN fibrous monoliths were prepared with 4 wt% Y2O3 added as a sintering aid to the Si3N4. Residual carbon, present in the billet before hot-pressing, was shown to influence the final microstructure. The sintering aid glass, known to migrate into the BN cell boundaries during hotpressing, was not sufficient in quantity to prevent premature shear failure when samples were tested in flexure....

Though press and sinter powder metallurgy (PM) steel offers cost-effective solutions for structural applications, there is a constant drive improvement in their density. Addition of nanopowder to the conventional micrometre-sized metal explored improve In this study, effect addition varying amounts has been studied. Carbonyl iron (<5 ?m) water atomized (<45 were used as base which (<100 nm) was...