A solution filling and drying method has been demonstrated to fabricate Si/PEDOT:PSS core/shell nanowire arrays for hybrid solar cells. The hybrid core/shell nanowire arrays show excellent broadband anti-reflection, and resulting hybrid solar cells absorb about 88% of AM 1.5G photons in the 300–1100 nm range. The power conversion efficiency (PCE) of the hybrid solar cell reaches 6.35%, and is p...

The study on graphene oxide (GO) grows rapidly in recent years. We find that graphene oxide could act as the passivation material in photovoltaic applications. Graphene oxide has been applied on Si two-different-metal solar cells. The suitable introduction of graphene oxide could result in obvious enhancement on the efficiency. The simple chemical process to deposit graphene oxide makes low the...

Solar cells based on a heterojunction between crystalline silicon and the organic polymer PEDOT:PSS were fabricated at temperatures < 100oC by spin-coating. The Si/PEDOT interface blocks electrons in n-type silicon from moving to an anode and functions as a low-temperature alternative to diffused p-n junctions. Reverse recovery measurements were used to show that current in the device is primar...

two organic compounds (sc-23=(e)-2-cyano-3-(2,3-dimethoxyphenyl) acrylic acid and sc-25=(e)-2-cyano-3-(2,5-dimethoxyphenyl) acrylic acid) involving methoxy groups as the electron donor and cyanoacrylic acid group as the electron acceptor have been investigated for dye sensitized solar cells. they shows a short-circuit current density (jsc) of 2.08 and 1.81 ma cm-2, an open circuit voltage (voc)...

Crystalline silicon (c-Si) solar cells have the lion share in world PV market. Solar cells made from crystalline silicon have lower conversion efficiency, hence optimization of each process steps are very important. Achieving low-cost photovoltaic energy in the coming years will depend on the development of third-generation solar cells. Given the trend towards these Si materials, the most promi...

In p-type c-Si solar cells, selective emitter structures generated by emitter etch-back (EEB) have been introduced in recent years in order to minimize electrical losses in the phosphorous emitter being one of the dominant factors limiting the performance of standard screen-printed p-type c-Si solar cells. In this work, a homogeneously or selectively etched-back boron emitter is demonstrated to...