نتایج جستجو برای: shift length

تعداد نتایج: 438901  

1997
Yoshinobu Higami Kozo Kinoshita

This paper presents a design-for-testability technique, called partially parallel scan chain ( PPSC ), which aims at reduction of test length for sequential circuits. Since the partially parallel scan chain allows to control and observe subset of flip-flops (FFs) concurrently during scan shift operations, the number of scan shift clocks is reduced.

Journal: :The journal of physical chemistry. A 2011
Graham D Reid Michael D Robertson Anthony Z Tong

Current phase-shift cavity ring-down spectroscopy (PS-CRDS) experiments make use of equations originally developed for fluorescence studies. As these equations fail to take the length of the optical cavity and the superposition of reflecting beams into account, they lose validity as the length of the cavity increases. A new set of equations, based solely on the principles of PS-CRDS, is develop...

2008
Rebecca Loudoun

Twelve-hour shifts are a popular alternative to 8-hour shifts as many consider these shift arrangements superior in terms of facilitating a better social and family life. This view is largely based on anecdotal evidence, however as few studies have examined longitudinal relations between work/non-work conflict and shift length. Using self-report data from 137 machine operators this study examin...

Journal: :Muscle & nerve 2005
Karin H Gerrits Constantinos N Maganaris Neil D Reeves Anthony J Sargeant David A Jones Arnold de Haan

Muscles of individuals with a spinal cord injury (SCI) exhibit an unexpected leftward shift in the force (torque)-frequency relationship. We investigated whether differences in torque-angle relationships between SCI and able-bodied control muscles could explain this shift. Electrically stimulated knee-extensor contractions were obtained at knee flexion angles of between 30 degrees and 90 degree...

2016
Song-Jin Im Gum-Song Ho Da-Jie Yang Zhong-Hua Hao Li Zhou Nam-Chol Kim Il-Gwang Kim Qu-Quan Wang

We present that surface plasmon polariton, side-coupled to a gain-assisted nanoresonator where the absorption is overcompensated, exhibits a prominent phase shift up to π maintaining the flat unity transmission across the whole broad spectra. Bandwidth of this plasmonic phase shift can be controlled by adjusting the distance between the plasmonic waveguide and the nanoresonator. For a moderate ...

2000
MATTHIAS KÜNZER David J. Benson

We give a formula for a morphism between Specht modules over (Z/m)Sn, where n ≥ 1, and where the partition indexing the target Specht module arises from that indexing the source Specht module by a downwards shift of one box, m being the box shift length. Our morphism can be reinterpreted integrally as an extension of order m of the corresponding Specht lattices.

پایان نامه :وزارت علوم، تحقیقات و فناوری - دانشگاه صنعتی (نوشیروانی) بابل - دانشکده برق و کامپیوتر 1393

در این پایان نامه به مسئله ردگیری و بیان الگوریتمی جهت ردیابی اهداف پرنده پرداخته می شود. امروزه با توجه به پیشرفت روزافزون تکنولوژی ساخت هواپیماها و همچنین مجهز شدن آنها به سلاح های ضد رادار مانند موشک های ضد تشعشع، استفاده از ابزار و روش های غیر فعال جهت ردیابی اهداف هوایی مورد توجه قرار گرفته است، در این میان دوربین مادون قرمز به عنوان یک عنصر غیر فعال و تصاویر بدست آمده از آن در ردگیری اهدا...

پایان نامه :وزارت علوم، تحقیقات و فناوری - دانشگاه محقق اردبیلی 1389

در این پایان نامه که مرجع اصلی آن garcia, a.g., perez-villalon, g. 2008. approximation from shift-invariant spaces by generalized sampling formulas, appl. comput. harmon. anal. 24: 58-69. است، یک برنامه ی تقریب به وسیله ی فرمول های نمونه گیری، پیشنهاد شده است.

2007
Shuhong Li Qiaorong Zhang Yadong Zhang

This paper presents an adaptive wavelet-based image-watermarking scheme embedding shift-orthogonal finite-length sequences. This sequence has the characteristics of shift-orthogonality and mean 0, variance 1. The security of this sequence is higher than pseudo random sequence because of the parameters used to generate the sequence. Watermark embedding is based on the characteristics of the huma...

2007
M. Watanabe D. Fukushi H. Yano S. Nakajima

We have successfully fabricated 0.1 μm gate GaAs MESFETs using a low cost process. The result was obtained from optical lithography, resist etching, and ion-implantation technologies based on Single Resist layer Dummy gate (SRD) process. The novel feature of the SRD process is forming a sub-quarter micron gate with conventional optical lithography. We have obtained a 0.18 μm gate using this pro...

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