Surface charge transfer is presented as an effective doping technique for III−V nanostructures. We generalize that the technique is applicable to nanoscale semiconductors in the limit where carriers are quantum confined. As a proof-of-concept, potassium surface charge transfer doping is carried out for one-dimensional (1D) and two-dimensional (2D) InAs on Si/SiO2 substrates. Experiments and sim...

Polymorphism is observed in 9,9-diarylfluorene-based organic semiconductors. The effects of rich phase behavior on the charge transport and photoluminescence properties of these semiconductors are investigated. Polymorphism control is a rational way to tailor the optoelectronic functions of their films.

A fundamental understanding of the mechanisms governing the behavior of defects and impurities is essential to control doping in semiconductors. Wide-band-gap semiconductors, in particular, often exhibit doping-related problems. We discuss how rst-principles theoretical techniques can be applied to the calculation of formation energies and concentrations of native defects and dopant impurities....

The G-12 Solid State Device Committee of the Government Electronics & Information Technology Association (GEIA) developed guidelines for assessing the suitability of plastic encapsulated microcircuits and semiconductors for use in military, aerospace and other rugged applications. EIA Engineering Bulletin SSB-1, Guidelines for Using Plastic Encapsulated Microcircuits and Semiconductors in Milit...

The photocatalytic process using semiconductors with a nanostructure is one of the technologies usedfor the destructive oxidation of organic compounds such as surfactants. In this paper, thephotocatalytic degradation of Cetyl pyridinium chloride (CPC), was investigated in aqueous phaseusing various semiconductors such as titanium dioxide (Ti02), zinc oxide (ZnO), stannic oxide(Sn02). The degrad...

we report the growth by ion exchange synthesis of zns nanoparticles in mcm-41 matrices using zn (ch3coo)2 and na2s starting sources. the final product (zns/mcm-41) was characterized by x-ray diffraction (xrd) pattern, transmission electron microscopy (tem), scanning electron microscopy (sem), infrared spectrometry (ir) and uv-vis spectroscopy. its crystalline structure and morphology was studie...

rapid thermal processing (rtp) has become a key technology for semiconductor device manufacturing in a variety of applications, such as thermal oxidation, annealing, and thin-film growth. hence, understanding the radiative properties of silicon and other relevant materials is essential for the analysis of the thermal transport processes. we have analyzed and calculated the spectral, directional...

Introduction Silicon has long been the semiconductor of choice for high-voltage power electronics applications. However, wide-bandgap semiconductors such as SiC and GaN have begun to attract attention because they are projected to have much better performance than silicon. In comparison with silicon, wide-bandgap semiconductors offer a lower intrinsic carrier concentration, a higher electric br...