Figure 1. Schematic diagramof a cross-point switch (a), which consists of a Cartesian matrix of orthogonal wires with an air gap at each intersection. The switch at each intersection can be turned on and off by The main driving engine of the IT revolution has been geometry miniaturization of transistors. This has been accomplished with a striking development in microfabrication technology, refe...

According to the International Technology Roadmap for Semiconductors in the next 10-15 years the limits imposed by the physics of switch operation will be the major roadblock for future scaling of the CMOS technology. Among these limits the most fundamental is represented by the so-called Shannon-von Neumann-Landauer limit that sets a lower bound to the minimum heat dissipated per bit erasing o...

The authors show that the incorporation of gain media in only a selected device area can annul the effect of material loss, and enhance the performance of loss-limited plasmonic devices. In addition, they demonstrate that optical gain provides a mechanism for on/off switching in metal-dielectric-metal (MDM) plasmonic waveguides. The proposed gain-assisted plasmonic switch consists of a subwavel...

With the increasing interest in radio frequency switch by using the CMOS circuit technology for the wireless communication systems is in demand. A traditional n-MOS Single-Pole Double-Throw (SPDT) switch has good performances but only for a single operating frequency. For multiple operating frequencies, to transmitting or receiving information through the multiple antennas systems, known as MIM...

In this paper, the authors propose a novel static random access memory (SRAM) that employs the adiabatic logic principle. To reduce energy dissipation, the proposed adiabatic SRAM is driven by two trapezoidal-wave pulses. The cell structure of the proposed SRAM has two high-value resistors based on a p-type metal-oxide semiconductor transistor, a cross-coupled n-type metal-oxide semiconductor (...

Several antimonide-based compound semiconductor (ABCS) microstrip MMICs, an X-Band low-noise amplifier and an rf switch, using 0.1-μm gate length Antimonide Based Compound Semiconductor (ABCS) metamorphic InAs/AlSb HEMTs, have been fabricated and characterized on a 50 μm GaAs substrate. The compact 0.7 mm two-stage X-band LNA demonstrated a 1.25 dB noise-figure at 10 GHz with an associated gain...

Noise immunity and low-energy computing have become limiting factors in the semiconductor roadmap as transistor feature sizes shrink. The subject of our study is the probabilistic switch, implemented in the complementary metal–oxide– semiconductor (CMOS) domain, referred to as a probabilistic CMOS (PCMOS) switch, whose behavior is rendered probabilistic by noise. In conducting this study, we ar...

Low-power operation of semiconductor devices is crucial for energy conservation. In particular, energy-efficient devices are essential in portable electronic devices to allow for extended use with a limited power supply. However, unnecessary currents always exist in semiconductor devices, even when the device is in its off state. To solve this problem, it is necessary to use switch devices that...