In this paper, we investigate variation of the wavelength, intensity and polarization of the self-assembled InAs/GaAs quantum dots emission by microphotoluminescence spectroscopy at the liquid helium temperature. The microcavity wafer sample is grown by molecular beam epitaxy (MBE) and chemically etched into the micropillar structure (with elliptical cross section - long and short axis 2µm×1.5µ...

We investigate the feasibility of manipulating individual spin in a superconducting junction where Bogoliubov quasiparticles can be trapped in discrete Andreev levels. We call this system an Andreev quantum dot (AQD) to be contrasted with a common semiconductor quantum dot. We show that the AQD can be brought into a spin-1/2 state. The coupling between the spin and superconducting current facil...

We present a mechanism to protect quantum information stored in an ensemble of nuclear spins in a semiconductor quantum dot. When the dot is charged the nuclei interact with the spin of the excess electron through the hyperfine coupling. If this coupling is made off-resonant, it leads to an energy gap between the collective storage states and all other states. We show that the energy gap protec...

We demonstrate theoretically that quantum dots in bilayers of graphene can be realized. A position-dependent doping breaks the equivalence between the upper and lower layer and lifts the degeneracy of the positive and negative momentum states of the dot. Numerical results show the simultaneous presence of electron and hole confined states for certain doping profiles and a remarkable angular mom...

Quantum-dot molecules were constructed on a semiconductor surface using atom manipulation by scanning tunneling microscopy (STM) at 5 K. The molecules consist of several coupled quantum dots, each of which comprises a chain of charged adatoms that electrostatically confines intrinsic surface-state electrons. The coupling takes place across tunnel barriers created reversibly using the STM tip. T...

We study the optical emission of single semiconductor quantum dots weakly coupled to a photonic-crystal micro-cavity. The linearly polarized emission of a selected quantum dot changes continuously its polarization angle, from nearly perpendicular to the cavity mode polarization at large detuning, to parallel at zero detuning, and reversing sign for negative detuning. The linear polarization rot...

A double quantum dot device is a tunable two-level system for electronic energy states. A dc electron current was used to directly measure the rates for elastic and inelastic transitions between the two levels. For inelastic transitions, energy is exchanged with bosonic degrees of freedom in the environment. The inelastic transition rates are well described by the Einstein coefficients, relatin...

In order to stimulate these systems into emitting photons, lasers are used to excite them to high-level excited states. These states relax, and in doing so release photons. This is called quasi-resonant excitation. The problem with this quasi-resonant excitation procedure is that it also excites the semiconductor solid-state environment surrounding the quantum dot. This can couple to the quantu...

We have measured the relaxation time, T1, of the spin of a single electron confined in a semiconductor quantum dot (a proposed quantum bit). In a magnetic field, applied parallel to the two-dimensional electron gas in which the quantum dot is defined, Zeeman splitting of the orbital states is directly observed by measurements of electron transport through the dot. By applying short voltage puls...

The ground state electronic configuration of semiconductor spherical quantum dots populated with different numbers of excess electrons, for different radii and dielectric constants of the embedding medium is calculated and the corresponding phase diagram drawn. To this end, an extension of the spin density functional theory to study systems with variable effective mass and dielectric constant i...