نتایج جستجو برای: semiconductor metal boundary

تعداد نتایج: 405674  

2018
Ibadillah A. Digdaya Bartek J. Trześniewski Gede W. P. Adhyaksa Erik C. Garnett Wilson A. Smith

Metal-insulator-semiconductor (MIS) photoelectrodes offer a simple alternative to the traditional semiconductor-liquid junction and the conventional p-n junction electrode. Highly efficient MIS photoanodes require interfacial surface passivating oxides and high workfunction metals to produce a high photovoltage. Herein, we investigate and analyze the effect of interfacial oxides and metal workf...

Journal: :Nature materials 2009
Jun Yang Edward H Sargent Shana O Kelley Jackie Y Ying

Nanocrystals prepared in organic media can be easily self-assembled into close-packed hexagonal monolayers on solvent evaporation for various applications. However, they usually rely on the use of organometallic precursors that are soluble in organic solvents. Herein we report a general protocol to transfer metal ions from an aqueous solution to an organic medium, which involves mixing the aque...

پایان نامه :وزارت علوم، تحقیقات و فناوری - دانشگاه یزد 1387

چکیده ندارد.

Journal: :Physical review letters 2000
Landman Barnett Scherbakov Avouris

Silicon nanowires assembled from clusters or etched from the bulk, connected to aluminum electrodes and passivated, are studied with large-scale local-density-functional simulations. Short ( approximately 0.6 nm) wires are fully metallized by metal-induced gap states resulting in finite conductance ( approximately e(2)/h). For longer wires ( approximately 2.5 nm) nanoscale Schottky barriers dev...

Journal: :Bulletin of Materials Science 1994

Journal: :Journal of the Korean Institute of Electrical and Electronic Material Engineers 2014

2003
Thomas MAXISCH

We present a theoretical study of the physical characteristics of metal/semiconductor junctions. Using first principle pseudopotential calculations, we have investigated the nature of electronic states with energies within the semiconductor band gap of representative abrupt, defect-free, anion-terminated metal/III-V interfaces. Namely, we focused on Al contacts to GaAs(001), AlAs(001) and cubic...

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