Wide bandgap power semiconductors such as SiC or GaN can safely operate at a junction temperature of 500°C. Such a high operating temperature range can substantially relax or completely eliminate the need for bulky and costly cooling components commonly used in silicon-based power electronic systems. However, a major limitation to fully realizing the potential of SiC and other wide band-gap sem...

The control of electronic and thermal transport through material interfaces is crucial for numerous micro and nanoelectronics applications and quantum devices. Here we report on the engineering of the electro-thermal properties of semiconductor-superconductor (Sm-S) electronic cooler junctions by a nanoscale insulating tunnel barrier introduced between the Sm and S electrodes. Unexpectedly, suc...

A simple analysis is presented of twin-stripe semiconductor Y-junction laser amplifier switches that operate through simultaneous changes in gain and refractive index due to free carrier injection. This shows that (in contrast to four-port directional coupler devices based on the same mechnism) good cross-talk performance may be obtained for a wide range of operating conditions.

Semiconductor|melanin interfaces have received increasingly more attention in the fields of photocatalysis and applied electrochemistry because their facile synthesis, unique electrical properties, strong capability toward photosensitization. In this work, we describe electropolymerization quinone-rich polydopamine (PDA) on surface hydrogenated TiO2 nanotubes with enhanced photoactivity visible...

Direct solvent exfoliation of bulk MoS2 with the assistance of poly(3-hexylthiophene) (P3HT) produces a novel two-dimensional organic/inorganic semiconductor hetero-junction. The obtained P3HT-MoS2 nanohybrid exhibits unexpected optical limiting properties in contrast to the saturated absorption behavior of both P3HT and MoS2, showing potential in future photoelectric applications.

Disorder in a proximitizing bulk superconductor can scatter quasiparticles putative topological and eventually destroy the superconducting state. We use scattering approach random-matrix calculation to estimate disorder time Josephson junction. find that rate from of superconductor, even strong-coupling limit, is suppressed ratio Fermi momenta between semiconductor superconductor. This suppress...

Confocal Raman spectral imaging results are presented for a metal-to-semiconductor intramolecular junction (IMJ) on an isolated carbon nanotube. Spectra observed at the junction are consistent with the symmetry lowering expected from the occurrence of pentagon-heptagon defects to produce the chirality shift. The IMJ transition zone is sharp and preserves the nanotube diameter. These results hav...

We have measured the conductance and shot noise of superconductor-normal metal S-N junctions between a niobium Nb film and a two-dimensional electron gas 2DEG , formed in an InAs-based semiconductor heterostructure. Adjacent to the junction, the 2DEG is shaped into a sub-micrometer beam splitter. The current shot noise measured through one arm of the beam splitter is found to be enhanced due to...

Transport properties of a superconductor-semiconductor-superconductor (Su-Sm-Su) junction with superlattice structure are investigated. Differential resistance as a function of voltage shows oscillatory behavior under the irradiation of radio-frequency (rf) waves with the specific frequency of 1.77 GHz regardless of the superconducting materials and the junction geometries. Experimental data ar...

We realize a hybrid superconductor-semiconductor transmon device in which the Josephson effect is controlled by gate-defined quantum dot an InAs/Al nanowire. Microwave spectroscopy of transmon's transition spectrum allows us to probe ground state parity as function gate voltages, external magnetic flux, and field applied parallel The measured phase diagram agreement with that predicted single-i...