نتایج جستجو برای: semiconducting silicon

تعداد نتایج: 86286  

2007
Gilles Buchs Arkady V Krasheninnikov Pascal Ruffieux Pierangelo Gröning Adam S Foster Risto M Nieminen Oliver Gröning

The specific, local modification of the electronic structure of carbon nanomaterials is as important for novel electronic device fabrication as the doping in the case of silicon-based electronics. Here, we report low temperature scanning tunneling microscopy and spectroscopy study of semiconducting carbon nanotubes subjected to hydrogen-plasma treatment. We show that plasma treatment mostly res...

Journal: :Nano letters 2014
Yu-Chuan Lin Chih-Yuan S Chang Ram Krishna Ghosh Jie Li Hui Zhu Rafik Addou Bogdan Diaconescu Taisuke Ohta Xin Peng Ning Lu Moon J Kim Jeremy T Robinson Robert M Wallace Theresa S Mayer Suman Datta Lain-Jong Li Joshua A Robinson

Heterogeneous engineering of two-dimensional layered materials, including metallic graphene and semiconducting transition metal dichalcogenides, presents an exciting opportunity to produce highly tunable electronic and optoelectronic systems. In order to engineer pristine layers and their interfaces, epitaxial growth of such heterostructures is required. We report the direct growth of crystalli...

2015
Edwin Preciado Florian J.R. Schülein Ariana E. Nguyen David Barroso Miguel Isarraraz Gretel von Son I-Hsi Lu Wladislaw Michailow Benjamin Möller Velveth Klee John Mann Achim Wixforth Ludwig Bartels Hubert J. Krenner

Lithium niobate is the archetypical ferroelectric material and the substrate of choice for numerous applications including surface acoustic wave radio frequencies devices and integrated optics. It offers a unique combination of substantial piezoelectric and birefringent properties, yet its lack of optical activity and semiconducting transport hamper application in optoelectronics. Here we fabri...

Journal: :Science and technology of advanced materials 2011
Nandu B Chaure Andrew N Cammidge Isabelle Chambrier Michael J Cook Markys G Cain Craig E Murphy Chandana Pal Asim K Ray

Solution-processed films of 1,4,8,11,15,18,22,25-octakis(hexyl) copper phthalocyanine (CuPc6) were utilized as an active semiconducting layer in the fabrication of organic field-effect transistors (OFETs) in the bottom-gate configurations using chemical vapour deposited silicon dioxide (SiO2) as gate dielectrics. The surface treatment of the gate dielectric with a self-assembled monolayer of oc...

Journal: :Nature nanotechnology 2009
Thorsten Fischer Ashutosh Agarwal Henry Hess

Biosensors can be miniaturized by either injecting smaller volumes into micro- and nanofluidic devices or immersing increasingly sophisticated particles known as 'smart dust' into the sample. The term 'smart dust' originally referred to cubic-millimetre wireless semiconducting sensor devices that could invisibly monitor the environment in buildings and public spaces, but later it also came to i...

2007
Mandar V. Joshi Waleed K. Al-Assadi

Fundamental electronic structures such as Diodes and FETs have been shown to be constructed using selectively doped semiconducting Carbon Nanotubes or Silicon Nanowires (CNTs, SiNWs) at nanometer scale. Memory and Logic cores s have been proposed, that use the configurable junctions in 2-D crossbars of CNTs. These Memory and Logic arrays at this scale exhibit a significant amount of defects tha...

2007
Mandar V. Joshi Waleed K. Al-Assadi

It has been shown that fundamental electronic structures such as Diodes, and FET’s can be constructed using selectively doped semiconducting Carbon Nanotubes or Silicon Nanowires (CNT’s, SiNW’s) at nanometer scale. Memory and Logic cores using these technologies have been proposed, that use the configurable junctions in twodimensional crossbars of CNT’s. These Memories and Logic Arrays at this ...

Journal: :Nano letters 2016
Xiaodong Zhou Kibum Kang Saien Xie Ali Dadgar Nicholas R Monahan X-Y Zhu Jiwoong Park Abhay N Pasupathy

The electronic properties of semiconducting monolayer transition-metal dichalcogenides can be tuned by electrostatic gate potentials. Here we report gate-tunable imaging and spectroscopy of monolayer MoS2 by atomic-resolution scanning tunneling microscopy/spectroscopy (STM/STS). Our measurements are performed on large-area samples grown by metal-organic chemical vapor deposition (MOCVD) techniq...

2009
Rubina Sultan A. D. Avery B. L. Zink

We present thermal conductivity measurements of micromachined 500 nm thick silicon-nitride Si–N beams suspended between two Si–N islands, in the temperature range from 77 to 325 K. The measured thermal conductivity, k, of Si–N at high temperatures is in good agreement with previously measured values for Si–N grown by low-pressure chemical vapor deposition, but behaves much differently as temper...

2005
S. Witanachchi R. Hyde H. S. Nagaraja M. Beekman G. S. Nolas

Thin films of clathrate material have been grown using the laser ablation technique on a variety of substrates. Films deposited on silicon substrates exhibited a significant deficiency of Ga and Ge while the stoichiometry was preserved in films deposited on quartz, sapphire, and glass substrates. Ablation characteristics of the clathrate target for laser radiation at three different wavelengths...

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