Today's circuit technology requires low-power transistors and diodes to extend Moore's law. While research has been focused on reducing power consumption of transistors, have not widely studied. Here, we report a low-power, thus steep-slope Schottky diode, with “cold metal” source. The barrier between metal electrode bulk MoS 2 enabled the diode behavior, IV curve originated from change in dens...

A power MOSFET with P-base Schottky diode and built-in channel is proposed numerically investigated in this article. The formed by the contact reverse series P-base/N-drift junction diode. Besides, coupling gate of dummy to source, a introduced, which provides unipolar conduction current path drastically reduces gate-to-drain charge. When serves as freewheeling diode, reverse-biased inactivates...

In this paper, we present the design of a 285 GHz tripler realized by planar Schottky diode. The complete multiplying circuit and diodes is mounted on 50 um thick quartz substrate. measured result shows that output power achieved above 3.1 dBm in range from 280 to 290 with constantly 20 driven across band. peak 4 285.6 GHz.