نتایج جستجو برای: schottky cell
تعداد نتایج: 1687676 فیلتر نتایج به سال:
The nature and photoelectrochemical reactivity of nanoporous semiconductor electrodes have attracted a great deal of attention. Nanostructured materials have promising capabilities applicable for the construction of various photonic and electronic devices. In this paper, a mesoporous TiO(2) thin film photoanode was soaked in an aqueous methanol solution using an O(2)-reducing Pt-based cathode i...
2014 The preparation of hydrogenated, r.f. sputtered a-Si films, suitable for large area solar cell arrays is discussed. Optical and electrical measurements on such materials contacted with a variety of metals are detailed. Initial experimental prototype cells, with areas up to 1 cm2 and efficiencies of around 2 %, are described. REVUE DE PHYSIQUE APPLIQUÉE TOME 13, DÉCEMBRE 1978,
We report 100 GHz and 200 GHz monolithic slot antenna coupled RTD array oscillators. The IC process for the array oscillators incorporates 0.1μm InGaAs/AlAs Schottky-collector RTDs (SRTDs) vertically integrated above AlInGaAs Schottky-diode stabilizers which suppress parasitic oscillations in the DC bias circuit. A quasi-optical transmitter/receiver set up using the RTD oscillator as transmitte...
................................................................................................................................................ 2 INTRODUCTION ....................................................................................................................................... 4 MOTIVATION: THE CLEAN ENERGY CHALLENGE ...............................................................
In this study, effect of immersion time on the electrochemical behaviour of AISI 321 stainless steel (AISI 321) in 0.1 M H 2SO 4 solution under open circuit potential (OCP) conditions was evaluated by potentiodynamic polarization, Mott–Schottky analysis and electrochemical impedance spectroscopy (EIS). Mott–Schottky analysis revealed that the passive films behave as n-type and p-type s...
The influence of the Schottky contact is studied for hole transport material (HTM) free CH3NH3PbI3 perovskite solar cells (PSCs), by using drift-diffusion and small signal models. The basic current-voltage and capacitance-voltage characteristics are simulated in reasonable agreement with experimental data. The build in potential of the finite CH3NH3PbI3 layer is extracted from a Mott-Schottky c...
This paper deals with the physical study of the Schottky contact after pulsed-RF saturated life test under enhanced drain bias voltage on power HEMTs. Electrical measurements showed a pinch-off voltage (VP) shift, a decrease of output power and average drain current while Photon Emission Microscopy (PEM) was used to identify the degradation distribution along the 80 fingers die. Finally, Transm...
The current-voltage (I-V) characteristics of Pt/(n.u.d)-GaN and Pt/Si-doped-GaN diodes Schottky are investigated. Based on these measurements, physical mechanisms responsible for electrical conduction have been suggested. The contribution of thermionic-emission current and various other current transport mechanisms were assumed when evaluating the Schottky barrier height. Thus the generation-re...
Ti-doped nano MgAl2O4 for white emission was synthesized by combustion method. Extrinsic Schottky defects, Al vacancies and Ti4+ dopant in Al sites, which are considered to be responsible for bluish-white emission, were observed by STEM on the surface of Ti-doped nano MgAl2O4 powder. The stabilities of the Schottky defect associates, (TiAl·-VAl''')'', were demonstrated by DFT calculation. The e...
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