Schottky diode properties of semitransparent Ag(4 nm)/Au(4 nm) metal stack on In0.2Ga0.8N were investigated and defect characterization was performed using capacitance deep level transient (DLTS) and optical spectroscopy (DLOS). DLTS measurements made on the In0.2Ga0.8N Schottky diodes, which displayed a barrier height of 0.66 eV, revealed the presence of two deep levels located at Ec-0.39 eV a...

We report 100 GHz and 200 GHz monolithic slot antenna coupled RTD array oscillators. The IC process for the array oscillators incorporates 0.1μm InGaAs/AlAs Schottky-collector RTDs (SRTDs) vertically integrated above AlInGaAs Schottky-diode stabilizers which suppress parasitic oscillations in the DC bias circuit. A quasi-optical transmitter/receiver set up using the RTD oscillator as transmitte...

In this paper, the impact of anode contact in SBDs, PiN, JBS and MPS diodes is analyzed through TCAD simulations. The focus investigation correct simulation Schottky barrier height on different areas device to correctly simulate a or structure. It found that splitting an accurate selection pzone necessary allow onset bipolar conduction devices. way, it possible analyze behavior diode, including...

A room-temperature Schottky diode-based WM-86 (WR-0.34) harmonic mixer was developed to build high-resolution spectrometers, and multipixel receivers in the terahertz (THz) region for applications such as radio astronomy, plasma diagnostics, and remote sensing. The mixer consists of a quartz-based local oscillator (LO), intermediate-frequency (IF) circuits, and a GaAs-based beam-lead THz circui...

This paper focuses on using high temperature operating capability of SiC power devices, which are packaged in power modules. A SiC Schottky barrier diode is mounted on an active metal brazed Si3N4 substrate as a heat resistive power module. The temperature dependency of electrical characteristics of the SiC device and thermal dynamics of the power module are modeled for numerical electro therma...

Today's circuit technology requires low-power transistors and diodes to extend Moore's law. While research has been focused on reducing power consumption of transistors, have not widely studied. Here, we report a low-power, thus steep-slope Schottky diode, with “cold metal” source. The barrier between metal electrode bulk MoS 2 enabled the diode behavior, IV curve originated from change in dens...

Using a two-end bonded ZnO piezoelectric-fine-wire (PFW) (nanowire, microwire) on a flexible polymer substrate, the strain-induced change in I-V transport characteristic from symmetric to diode-type has been observed. This phenomenon is attributed to the asymmetric change in Schottky-barrier heights at both source and drain electrodes as caused by the strain-induced piezoelectric potential-drop...

This paper deals with Schottky and Heterostructure Barrier devices fabricated for planar integration in a 560 GHz Subharmonic Mixer (SHM). Taking advantage of an InP-based technology, two barrier types, metal/InGaAs and metal/InAlAs/InGaAs respectively, have been investigated. The design was carried out by means of self-consistent quantum calculations and the fabrication involved submicron Tsha...

Flexible radiation dosimeters have been produced incorporating thick films (>1 μm) of the semiconducting polymer poly([9,9-dioctylfluorenyl-2,7-diyl]-co-bithiophene). Diode structures produced on aluminium-metallised poly(imide) substrates, and with gold top contacts, have been examined with respect to their electrical properties. The results suggest that a Schottky conduction mechanism occurs ...

This paper studies transient thermal characteristics of ?-Ga2O3 Schottky barrier diode (SBD) packaged in TO-220. Planar and metal-oxide-semiconductor (MOS) trench anode types are evaluated. Junction temperature is estimated from dependency forward conduction measuring SBD characteristics. confirms the completeness processed junction on with extracted ideal factor height SBDs. The measured devel...