J. M. Zahler,1 A. Fontcuberta i Morral,1,2 M. J. Griggs,1 Harry A. Atwater,1 and Y. J. Chabal3 1Thomas J. Watson Laboratory of Applied Physics, California Institute of Technology, Pasadena, California 91125, USA 2Walter Schottky Institut, Technische Universität München, 85748 Garching, Germany 3Laboratory for Surface Modification, Rutgers University, Piscataway, New Jersey 08854, USA Received 3...

The electronic parameters and interface state properties of Yb/p-InP Schottky diode have been investigated by current­voltage (I­V), capacitance­voltage­frequency (C­V­f ) and conductance­voltage­frequency (G­V­f ) measurements at room temperature. The barrier height and ideality factor of the Yb/p-InP Schottky diode are found to be 0.68 eV (I­V)/0.79 eV (C­V) and 1.24, respectively. As well, t...

This article shows explicit relation between fractional expressions of Schottky-Klein type for hyperelliptic σ-function and a product of differences of the algebraic coordinates on each stratum of natural stratification in a hyperelliptic Jacobian.

Let X be a globally symmetric space of noncompact type, and Γ ⊂ Isom(X) a Schottky group of axial isometries. Then M := X/Γ is a locally symmetric Riemannian manifold of infinite volume. The goal of this note is to give an asymptotic estimate for the number of primitive closed geodesics in M modulo free homotopy with period less than t.

For a family of compact Riemann surfaces Xt of genus g > 1, parameterized by the Schottky space Sg, we define a natural basis of H(Xt, ω n Xt ) which varies holomorphically with t and generalizes the basis of normalized abelian differentials of the first kind for n = 1. We introduce a holomorphic function F (n) on Sg which generalizes the classical product ∏ ∞ m=1 (1 − q) for n = 1 and g = 1. W...