The properties of 2D materials devices are very sensitive to the physical, chemical and structural interactions that might happen during processing. Low-invasive patterning methods required fabricate at nanoscale. Here we developed a process combines oxidation scanning probe lithography (o-SPL) oxygen plasma nanoribbon field-effect transistors nano-constrictions on few-layer MoS2 MoSe2. has dou...

Stacking of two-dimensional electron gases (2DEGs) obtained by δ-doping of Ge and patterned by scanning probe lithography is a promising approach to realize ultrascaled 3D epitaxial circuits, where multiple layers of active electronic components are integrated both vertically and horizontally. We use atom probe tomography and magnetotransport to correlate the real space 3D atomic distribution o...

We report the development of a powerful analytical method that utilizes a tilted elastomeric pyramidal pen array in the context of a scanning probe lithography experiment to rapidly prepare libraries having as many as 25 million features over large areas with a range of feature sizes from the nano- to microscale. This technique can be used to probe important chemical and biological processes, o...

We present the fabrication process of a tool that can be used in standard atomic force microscope (AFM) for in situ characterization of chemical, chemical–mechanical or physical surface modification performed with the same device. The image obtained during scanning contains information about the modified and unmodified topographies for each scanning line, thus quantification of surface topograp...

Scanning Hall Probe Microscopy (SHPM) is a scanning probe microscopy technique developed to observe and image magnetic fields locally. This method is based on application of the Hall Effect, supplied by a micro hall probe attached to the end of cantilever as a sensor.  SHPM provides direct quantitative information on the magnetic state of a material and can also image magnetic induction under a...

Chalcogenide superlattice (SL) phase-change memory materials are leading candidates for non-volatile, energy-efficient electric memory where the electric conductance switching is caused by the atom repositioning in the constituent layers. Here, we study the time evolution of the electric conductance in [(GeTe)2/(Sb2Te3)1]4 SLs upon the application of an external pulsed electric field by analysi...

A double-lateral-gate p-type junctionless transistor is fabricated on a low-doped (10(15)) silicon-on-insulator wafer by a lithography technique based on scanning probe microscopy and two steps of wet chemical etching. The experimental transfer characteristics are obtained and compared with the numerical characteristics of the device. The simulation results are used to investigate the pinch-off...

The miniaturization of nanometer-sized multicolor fluorescent features is of continuous significance for counterfeit security features, data storage, and sensors. Recent advances in engineering of stimuli-responsive supramolecular polymeric materials that respond upon exposure to heat or mechanical force by changing their fluorescence characteristics open new opportunities as functional lithogr...