We have analyzed the stress build-up and vacancy dynamics due to material transport caused by electromigration in dual-damascene interconnect structures. Our model incorporates all relevant driving forces for material transport with a complete integration of mechanical stress in connection with microstructural aspects. First, it is shown that the addition of redundant vias can be effective in i...

Observations of knock-out mice suggest that breathing at birth requires correct development of a specific hindbrain territory corresponding to rhombomeres (r) 3 and 4. Focusing on this territory, we examined the development of a neuronal rhythm generator in the chick embryo. We show that rhythmic activity in r4 is inducible after developmental stage 10 through interaction with r3. Although the ...

We have previously demonstrated that inactivation of the Krox20 gene led to the disappearance of its segmental expression territories in the hindbrain, the rhombomeres (r) 3 and 5. We now performed a detailed analysis of the fate of prospective r3 and r5 cells in Krox20 mutant embryos. Genetic fate mapping indicates that at least some of these cells persist in the absence of a functional Krox20...

We analyzed the effect of strains on material transport in a typical dual damascene copper interconnect via under electromigration stress. The electromigration model incorporates all important driving forces for atom migration coupled with the solution of the electrical and thermal problems. Our approach differs from others by considering a diffusivity tensor in the transport equation taking in...

We demonstrate a damascene process for fabricating amorphous silicon (a-Si), single-mode optical channel waveguides and high-Q racetrack resonators. This process is compatible with thermal budget limitations for a-Si phase stability. It offers improved optical transmission and facilitates hydrogen encapsulation for process integration of a-Si waveguide cores. At 1,550 nm, the average measured t...

Introduction Historically, IBM has made performance the focus of its microelectronics technology strategy. For the wires and insulators used in the back-end-of-the-line (BEOL), this drove the use of damascene tungsten chemical-mechanical polish (CMP) local interconnects and vias, SiO2-based intermetal dielectric CMP planarization, high-aspect ratio aluminum wiring, high-density plasma SiO2 depo...

Electromigration (EM) is one of the main reliability concerns in copper interconnects. In particular, it is a critical issue for new emerging technologies, such as through silicon via (TSV) technology. In this work the impact of formation and growth of voids under a TSV located at the cathode end of a typical dual-damascene line is analyzed. The resistance change of the structure is numerically...

A novel wet cleaning formulation approach was developed with a TiN etch rate of more than 30 Å/min at room temperature and more than 100 Å/min at 50oC. The chemicals are compatible with Cu and low-k materials, and are suitable for Cu dual damascene interconnect 28 nm and smaller technology node applications. The chemicals offer a route to in situ controlled TiN pullback or even complete removal...