I.I.T. Bombay, in collaboration with C.R.L., B.E.L., is working on developing a speech codec to provide communication quality speech at low bit rates. The codec is required to be robust to acoustic background noise and to channel errors. A sinusoidal coder based on the MBE (Multiband Excitation) model has been adopted as the basic speech representation due to its compact parameter set and the r...

The dN/dS ratio between nonsynonymous and synonymous substitution rates has been used extensively to identify codon positions involved in adaptive processes. However, the accuracy of this approach has been questioned and very few studies have attempted to validate experimentally its predictions. Using the coat protein (CP) of Potato virus Y (PVY; genus Potyvirus, family Potyviridae) as a case s...

The aim of the work described in this paper is to develop and evaluate the speaker normalization technique based on the test to reference speaker mapping. The method is suitable for uniform time-frequency representation of speech used in speech corrector systems. The normalized spectrum is generated after the analysis by synthesis for the given utterance using the MBE (multiband excitation) cod...

Among the natural disturbances, drought may cause significant change in forest ecosystems by shifting phenology and productivity. Digital cameras have been used phenological observations for their high accuracy colour index values (digital-number of red, green blue) derived from long-term continuous digital camera imagery are useful as proxies investigating a canopy’s response to drought. Here,...

MnBi2Te4 has recently been predicted and shown to be a magnetic topological insulator with intrinsic antiferromagnetic order. However, it remains challenge grow stoichiometric films by molecular beam epitaxy (MBE) observe pure order magnetometry. We report on detailed study of grown Si(1 1 1) MBE elemental sources. Films about 100 nm thickness are analyzed in stoichiometric, structural, magneto...

We report the use of suboxide molecular-beam epitaxy (S-MBE) to grow β-Ga2O3 at a growth rate ∼1 µm/h with control silicon doping concentration from 5 × 1016 1019 cm−3. In S-MBE, pre-oxidized gallium in form molecular beam that is 99.98% Ga2O, i.e., suboxide, supplied. Directly supplying Ga2O surface bypasses rate-limiting first step two-step reaction mechanism involved by conventional MBE. As ...