1 Part 1: Covalent immobilisation of IGF-1 on PECVD-Si-Ti for orthopaedic biomaterial applications 1.

The use of the Plasma Enhanced Chemical Vapor Deposition techniques have increased during the last decades. PECVD attractiveness, basically due to the lowering of the substrate temperatures, has enlarged its uses because it allows an action of ions or excited species. However, the choice of the reactors is not always easy. After presenting the main domains of applications of the PECVD technique...

The fabrication of SiC MEMS pressure sensor based on novel vacuum-sealed method is presented in this paper. The sensor was fabricated using surface micromachining. Due to its excellent mechanical properties and high chemical resistance, PECVD (Plasma Enhanced Chemical Vapor Deposition) SiC was chosen as structural material. Polyimide is the sacrificial layer which solve stiction problem in proc...

With the realization of larger and more complex space installations, an increase in surface area exposed to atomic oxygen (AO) ultraviolet (UV) effects is expected, making structural integrity structures essential for future development. In a low Earth orbit (LEO), AO UV degradation can have devastating consequences polymer composite satellites installations. Composite materials such as carbon ...

Three-dimensional (3D) networks of carbon nanotubes (CNTs) were fabricated on a pillarpatterned substrate by plasma-enhanced chemical vapor deposition (PECVD). To fabricate 3D networks of CNTs, highly crystalline single-walled CNTs (SWCNTs) should be synthesize on the substrate. PECVD has advantages for low temperature growth and alignment of CNTs on the substrate, but it is difficult to synthe...

Water-enhanced degradation of p-type low temperature polycrystalline silicon thin film transistors under negative bias temperature (NBT) condition is studied. H2O penetration into gate oxide network and the role of H2O during NBT stress are confirmed and clarified respectively. To prevent H2O diffusion, a combination of a layer of PECVD SiO2 and a layer of PECVD Si3N4 as passivation layers are ...

Silicon heterojunction solar cells have high opencircuit voltages thanks to excellent passivation of the wafer surfaces by thin intrinsic amorphous silicon (aSi:H) layers deposited by plasma-enhanced chemical vapor deposition (PECVD). By using in-situ plasma diagnostics and ex-situ film characterization, we show that the best a-Si:H films for passivation are produced from deposition regimes clo...