Scaling of multi-pixel cryogenic detectors for imaging becomes increasingly difficult with size due to complexity of readout circuitry and cryogenic constraints (thermal load from wiring). We propose and demonstrate a new readout scheme based on a highly stable RF oscillator composed of a superconducting tunnel junction which exhibits relaxation oscillations. The oscillation frequency is almost...

A new low voltage CMOS infrared readout circuit using the buffer-direct injection method is presented. It uses a single supply voltage of 1.8 volts and a bias current of luA. The time-delay integration technique is used to increase the signal to noise ratio. A current memory circuit with faulty diode detection is used to remove dark current for background compensation and to disable a photodiod...

To respond to the high demand for high dynamic range imaging suitable for moving objects with few artifacts, we have developed a single-exposure dynamic range image sensor by introducing a triple-gain pixel and a low noise dual-gain readout circuit. The developed 3 μm pixel is capable of having three conversion gains. Introducing a new split-pinned photodiode structure, linear full well reaches...

Gallium nitride (GaN) and its alloys are becoming preferred materials for ultraviolet (UV) detectors due to their wide bandgap and tailorable out-of-band cutoff from 3.4 eV to 6.2 eV. GaN based avalanche photodiodes (APDs) are particularly suitable for their high photon sensitivity and quantum efficiency in the UV region and for their inherent insensitivity to visible wavelengths. Challenges ex...

Introduction: The ‘quanta image sensor (QIS)’ is being explored as a possible next-generation solid-state imaging technology to address issues with ‘sub-diffraction-limit (SDL)’ pixel sizes in the ‘CMOS image sensor (CIS)’ [1–3]. In the QIS concept, individual photoelectrons are counted by specialised SDL pixels termed ‘jots’, and the output of each jot is binary in nature. In addition to spati...

for Column Parallel Image Sensors Steven Huang, David Estrada, Daniel Van Blerkom and Barmak Mansoorian Forza Silicon Corporation, 2947 Bradley Street, Suite 130, Pasadena, CA 91107, USA tel: 626-796-1182, email: [email protected] Abstract This paper reports progress in our column parallel analog signal chain design strategy, utilizing varying degrees of parallelism for CMOS image sensors....

We present a cellular logic circuit for deciphering the profiles of toxin production in B. cereus, using multiple readout techniques based on the pore formation on the cell membrane. This new assay enables the simultaneous detection of seven biomarkers in pathogenic strains from various samples.

This paper proposes a direct capacitance-to-digital converter (CDC) for biotelemetry applications. The proposed circuit is based on a charge redistribution technique using a capacitive sensor and a ranging capacitor array. The circuit does not require accurate reference voltages, so it is robust for fluctuation of supply voltage. Output-code range can be dynamically zoomed in arbitrary capacita...

Gallium arsenide (GaAs) based microaccelerometers are being developed for guidance and navigation subsystems, and various microsensor systems. The microaccelerometer is a microelectromechanical system (MEMS) micromachined on top of GaAs substrate or GaAs integrated cirwits. The MEMS accelerometer is integrated on the same chip as the GaAs readout circuit and the GaAs analog to digital converter...