نتایج جستجو برای: random access time
تعداد نتایج: 2358137 فیلتر نتایج به سال:
This paper presents a new 10T SRAM cell that has enhanced read speed along with good read and write stability. While the read access time of the proposed cell is 0.72x and 0.83x smaller as compared to the two most popular 10T SRAM cells at 500C; the read SNM is 1.16x and 1.05x higher compared to existing 10T cells. Though the read-write power of the proposed cell is higher with respect to the e...
The semiconductor industry is often cited as a "strategic" industry in part because important learning-by-doing spillovers may justify special industrial policies. Documenting the precise nature of these spillovers is crucial for determining the advisability of such policies and is helpful for understanding the contribution of learning to endogenous growth. Yet existing empirical evidence on le...
there are many approaches for solving variety combinatorial optimization problems (np-compelete) that devided to exact solutions and approximate solutions. exact methods can only be used for very small size instances due to their expontional search space. for real-world problems, we have to employ approximate methods such as evolutionary algorithms (eas) that find a near-optimal solution in a r...
We show that a random-access machine (RAM) can simulate any effective algorithm with only constant overhead of time, thereby supporting the Extended Church-Turing Thesis.
A microscopic model of the resistive switching mechanism in bipolar metal-oxide based resistive random access memory (RRAM) is presented. The distribution of electron occupation probabilities obtained is in agreement with previous work. In particular, a low occupation region is formed near the cathode. A hysteresis cycle of RRAM switching simulated with the model including the ion dynamics is i...
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