This paper reports the improvements and limitations of MBE grown 1.3μm GaAsSb/GaAs single QW lasers. At room temperature, the devices show a low threshold current density (Jth) of 253 Acm, a transparent current density of 98 Acm, an internal quantum efficiency of 71%, an optical loss of 18 cm and a characteristic temperature (T0) = 51K. The defect related recombination in these devices is negli...
