نتایج جستجو برای: quantum pressure

تعداد نتایج: 698809  

In this theoretical research, the mechanism of the C2H + C2H2 reaction is studied by high-level quantum-chemical methods and kinetics of the reaction is investigated by statistical rate theories. High-level electronic structure calculation methods including M06-2X, CCSD(T), CBS-Q and G4 methods are employed to explore the doublet potential energy surface of the reaction and compute the molecula...

Journal: :The Review of High Pressure Science and Technology 2020

Journal: :Progress of Theoretical Physics Supplement 2005

Journal: :Journal of the Physical Society of Japan 2007

Journal: :international journal of nano dimension 0
m. abdollahi department of physics, faculty of science, i.h.u tehran, iran. m. a. talebian darzi department of physics, faculty of science, i.h.u tehran, iran. h. hoseinkhani department of physics, faculty of science, i.h.u tehran, iran. h. baghbani rizi department of physics, faculty of science, i.h.u tehran, iran.

in this research, the effect of the first order magnetic field on the ground-state of a centered hydrogenic donor impurity in a gaas/alas spherical quantum dot has been calculated. the perturbation method has been used within the framework of effective mass approximation for these calculations. overall, the analysis shows that a proper choice of quantum dot radius and magnetic field can signifi...

Quantum fisher information of a parameter characterizing the sensitivity of a state with respect to parameter changes. In this paper, we study the quantum fisher information of the W state for four, five, six and seven particles in decoherence channels, such as amplitude damping, phase damping and depolarizing channel. Using Krauss operators for decoherence channels components, we investigate t...

The relatively low power conversion efficiency (PCE) of quantum dot sensitized solar cells (QDSSCs) is attributed to charge recombination at the interfaces. Charge recombination process could be suppressed by coating the QD layer with a wide band gap semiconductor such as ZnS, which acts as a blocking layer between the QDs and hole transport material (HTM). In present study, to improve PCE of P...

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