A new method combining aqueous solution printing with UV Laser crystallization (UVLC) and post annealing is developed to deposit highly transparent and conductive Aluminum doped Zinc Oxide (AZO) films. This technique is able to rapidly produce large area AZO films with better structural and optoelectronic properties than most high vacuum deposition, suggesting a potential large-scale manufactur...

AlGaN/GaN metal-oxide-semiconductor high electron mobility transistors (MOS-HEMTs) using La2O3 as gate oxide by electron-beam evaporated have been investigated and compared with the regular HEMTs [1]. The La2O3 thin film achieved a good thermal stability after 200°C, 400°C and 600°C post-deposition annealing due to its high binding energy (835.7 eV) characteristics. Our measurements have shown ...

Post-deposition rapid thermal annealing (RTA) was performed on the Cr-less Co20at%Pt alloy with a Mn diffusion layer on top. A value of about 8 10 erg/cm3 was obtained for the as-deposited film and it decreased only up to about 10% after annealing. The high intergranular exchange coupling of the as-deposited CoPt film was suppressed by RTA and the coercivity increased dramatically from about 22...

GaN-based metal-oxide-semiconductor capacitors with ZrO2 as the dielectric layer have been prepared by atomic layer deposition. The accumulation and depletion regions can be clearly distinguished when the voltage was swept from -4 to 4 V. Post-annealing results suggested that the capacitance in accumulation region went up gradually as the annealing temperature increased from 300 to 500 °C. A mi...

in the present work the recrystallization behavior of deep drawing grade al-killed low carbon steel sheets produced by mobarakeh steel plant (msp) has been studied. salt bath isothermal annealing has been applied to cold rolled samples and the resulted microstrucrures have been compared with the microstructure obtained from the box annealing process in msp. it is found that at 635 and 700ºc the...

Complementary metal-oxide-semiconductor (CMOS)-compatible Ar+-implanted Si-waveguide p-i-n photodetectors operating in the mid-infrared (2.2 to 2.3 μm wavelengths) are demonstrated at room temperature. Responsivities exceeding 21 mA/W are measured at a 5 V reverse bias with an estimated internal quantum efficiency of 3.1%–3.7%. The dark current is found to vary from a few nanoamps down to less ...

Strain-free GaAs/Al0.33Ga0.67As quantum rings are fabricated by droplet epitaxy. Both photoresponse and photoluminescence spectra confirm optical transitions in quantum rings, suggesting that droplet epitaxial nanomaterials are applicable to intermediate band solar cells. The effects of post-growth annealing on the quantum ring solar cells are investigated, and the optical properties of the sol...

AISI 316 stainless steels were coated with 250 nm Ni film by electron beam deposition and post-annealed at different temperatures with a nitrogen flow of 600 cm3min-1 nitrogen. The prepared samples were corrosion tested in 1.0 M sulphuric acid solution using potentiodynamic technique. Crystallographic and morphological structure of the samples were analyzedanalysed by X-ray diffraction (XRD) an...

Tailoring the intrinsic length-scale effects in bulk metallic glasses (BMGs) via post-heat treatment necessitates a systematic analyzing strategy. Although various achievements were made in the past years to structurally enhance the properties of different BMG alloys, the influence of short-term sub-glass transition annealing on the relaxation kinetics is still not fully covered. Here, we aim f...

Effects of doping on single-walled carbon nanotubes (SWNT) networks with different metallicity are reported through the study of sheet resistance changes upon annealing and acid treatment. SWNT film with high metallic tube content is found to have relatively good chemical stability against post treatments, as demonstrated from its stable film performance in ambient after annealing, and merely 1...