The single-polysilicon non-self-aligned bipolar transistor in a 0.5-pm BiCMOS technology bas been converted into a double-polysilicon emitter-base self-aligned bipolar transistor with little increase in process complexity. Improved bipolar performance in the form of smaller base resistance and base-collector capacitance, larger knee current, higher peak cutoff frequency, and shorter ECL gate de...

using photovoltaic systems is gradually expanded by increasing energy demand. abundance and availability of this energy, has turned to one of the most important sources of renewable energy. unfortunately, photovoltaic systems have two big problems: first, those have very low energy conversion efficiency (in act between 12 and 42 percent under certain circumstances). second, the power produced b...

In this article, the authors show that geometric asymmetry in the layout of tunnel diodes yields asymmetry in the current-voltage I-V relationships associated with these diodes. Asymmetry improves diode performance. This effect is demonstrated for polysilicon–SiO2–Ti /Au and for Ni–NiO–Ni tunneling structures. For a polysilicon–SiO2–Ti /Au asymmetric tunneling diode ATD , sensitivity and I-V cu...

This letter presents an ultrathin textured polycrystalline oxide (polyoxide) ( ~100 A) prepared by thermal oxidation of thin polycrystalline silicon (polysilicon) film on n+ polysilicon. The presented textured polyoxide exhibits a much higher electron injection efficiency, a much smaller electron trapping rate, and a much larger charge to breakdown than the normal polyoxide. The value of Qhd of...

-------------------------------------------------------ABSTRACT--------------------------------------------------In this Paper an On chip High Voltage Generator with bulk CMOS process using Polysilicon Diodes is presented. As the polysilicon diodes are completely isolated from the bulk so the output voltage is not limited by the junction breakdown voltage of CMOS in charge pump circuit. The out...

We present a two-dimensional simulation model for dopant diffusion in polysilicon, which includes dopant clustering in grain interiors as well as in grain boundaries. The grain growth model is coupled with the diffusion coefficient of the dopants and the process temperature. For all high dose implantation cases the trapping/emission mechanism in polysilicon and the grain growth are the major ef...

A polysilicon transistor based active matrix organic light emitting diode (AMOLED) pixel with high pixel to pixel luminance uniformity is reported. The new pixel powers the OLEDs with small constant currents to ensure consistent brightness and extended life. Excellent pixel to pixel current drive uniformity is obtained despite the threshold voltage variation inherent in polysilicon transistors....

Failure of packaged polysilicon micro-electro-mechanical systems (MEMS) subjected to impacts involves phenomena occurring at several length-scales. In this paper we present a multi-scale finite element approach to properly allow for: (i) the propagation of stress waves inside the package; (ii) the dynamics of the whole MEMS; (iii) the spreading of micro-cracking in the failing part(s) of the se...

The calibration of a new submicrometer magnification standard for electron microscopes is described. The new standard is based on the width of a thin thermal-oxide film sandwiched between a silicon single-crystal substrate and a polysilicon capping layer. The calibration is based on an ellipsometric measurement of the oxide thickness before the polysilicon layer is deposited on the oxide. The u...