This paper presents novel advances in the deformation behaviour of polycrystalline and single crystal silicon using molecular dynamics (MD) simulation and validation of the same via nanoindentation experiments. In order to unravel the mechanism of deformation, four simulations were performed: indentation of a polycrystalline silicon substrate with a (i) Berkovich pyramidal and a (ii) spherical ...

A type of diagram is proposed as microstructure model of polycrystalline materials, Voronoi diagram in the Laguerre geometry based on random closed packing of spheres (RCP-LV diagram), and discussed in detail. The volumes of spheres are set to serve lognormal distribution, which is strongly inherited by distribution of cell volumes in the RCP-LV diagram. The geometrical and topological properti...

Polycrystalline silicon is used in microelectronic and microelectromechanical devices for which thermal design is important. This work measures the in-plane thermal conductivities of free-standing undoped polycrystalline layers between 20 and 300 K. The layers have a thickness of 1 +m, and the measurements are performed using steady-state Joule heating and electrical-resistance thermometry in p...

Ž . The low-field magneto-transport property of polycrystalline La Sr MnO LSMO thin films deposited on quartz 0.5 0.5 3 wafers by pulsed laser ablation at various temperatures is investigated. The film is of mixed amorphous and polycrystalline microstructure, depending on the depositing temperature. The low-field magneto-transport property of the thin films can be explained in terms of the two-...

Articles you may be interested in Anomalous hot-carrier-induced degradation of offset gated polycrystalline silicon thin-film transistors Appl. Reliability of laser-activated low-temperature polycrystalline silicon thin-film transistors Appl. Erratum: " Effect of excimer laser annealing on the structural and electrical properties of polycrystalline silicon thin-film transistors " [J. Effect of ...

A framework to calculate the spontaneous strain and polarization of a polycrystalline ferroelectric is presented, and various applications are discussed.

A IO N Graphene is a two-dimensional semimetal with zero band gap that exhibits excellent electrical, mechanical and thermal properties.[1,2] Transport through delocalized pi bonds allows charge carriers in graphene to achieve high mobility[3,4] for both electrons and holes, over ∼105 cm2/V·s for freely suspended graphene and >104 cm2/V·s for graphene on SiO2. Recent studies have suggested that...