In this study, the influence of direct current (DC) biasing on the growth of titanium dioxide (TiO₂) layers and their nucleation behavior has been investigated. Titania films were prepared by plasma enhanced atomic layer deposition (PEALD) using Ti(OiPr)₄ as metal organic precursor. Oxygen plasma, provided by remote inductively coupled plasma, was used as an oxygen source. The TiO₂ films were d...

Pt@TiO2@CNTs hierarchical structures were prepared by first functionalizing carbon nanotubes (CNTs) with nitric acid at 140 °C. Coating of TiO2 particles on the CNTs at 300 °C was then conducted by atomic layer deposition (ALD). After the TiO2@CNTs structure was fabricated, Pt particles were deposited on the TiO2 surface as co-catalyst by plasma-enhanced ALD. The saturated deposition rates of T...

The plasmonic behavior of Ag thin films produced by plasma enhanced atomic layer deposition (PEALD) has been investigated. We show that as-deposited flat PEALD Ag films exhibit unexpected plasmonic properties, and the plasmonic enhancement can differ markedly, depending on the microstructure of the Ag film. Electromagnetic field simulations indicate that this plasmonic behavior is due to air ga...

Aluminum nitride (AlN) hollow nanofibers were synthesized via plasma-enhanced atomic layer deposition using sacrificial electrospun polymeric nanofiber templates having different average fiber diameters (~70, ~330, and ~740 nm). Depositions were carried out at 200°C using trimethylaluminum and ammonia precursors. AlN-coated nanofibers were calcined subsequently at 500°C for 2 h to remove the sa...

In this paper, a method for the plasma-enhanced (PE) atomic layer deposition (ALD) of palladium on air-exposed, annealed poly(p-xylylene) (Parylene-N, or PPX) is presented. Palladium is successfully deposited on PPX at 80 °C using a remote, inductively coupled, hydrogen/nitrogen plasma with palladium (II) hexafluoroacetylacetonate (Pd(hfac)2) as the precursor. By optimizing the mixture of hydro...

Co3O4-coated commercial TiO2 powders (P25) p-n junction photocatalysts were prepared by plasma-enhanced atomic layer deposition (PEALD) technique. The structure, morphology, bandgap, and photocatalytic properties under ultraviolet light were investigated systematically. Although the deposition of Co3O4 does not change the anatase structure and crystallite size of P25 powders, the ultraviolet ph...

Growing high-quality and uniform dielectric on black phosphorus is challenging since it is easy to react with O2 or H2O in ambient. In this work, we have directly grown Al2O3 on BP using plasma-enhanced atomic layer deposition (PEALD). The surface roughness of BP with covered Al2O3 film can reduce significantly, which is due to the removal of oxidized bubble in BP surface by oxygen plasma. It w...

We report a low current collapse GaN-based high electron mobility transistor (HEMT) with an excellent thermal stability at 150 °C. The AlN was grown by N2-based plasma enhanced atomic layer deposition (PEALD) and shown a refractive index of 1.94 at 633 nm of wavelength. Prior to deposit AlN on III-nitrides, the H2/NH3 plasma pre-treatment led to remove the native gallium oxide. The X-ray photoe...

The high-temperature antioxidation behavior of Ti0.83Al0.17N prepared using plasma-enhanced atomic layer deposition sPEALDd with TiCl4, AlCl3, N2/H2/Ar, and NH3/H2/Ar radicals were studied. One cycle for depositing Ti0.83Al0.17N consisted of eight TiN cycles followed by two AlN cycles. After forming a 30-nm-thick Ti0.83Al0.17N film, the film was oxidized in ambient O2 at 650 °C for 30 min. The ...

ZnS/glass Thinlayer in high vacuum condition and $40$ degree‎ ‎Deposition angle has been produced by resistance evaporated method ‎with $28$ nm thickness‎. ‎cabin deposition temperature ZnS layer was‎ ‎about $50C$ and substrates were kept at room temperature‎. ‎The Atomic ‎Force Microscopy (AFM) and XRD analyses are perfectly accomplished‎ ‎for this layer.‎‎‎