Abstract Based on the thermo-electro-elastic coupling theory, mathematical model for a surface heated piezoelectric semiconductor (PS) plate is developed in time domain. Applying direct and inverse Laplace transformations to established model, mechanical electrical responses are investigated. The comparison between analytical solution finite element method (FEM) conducted, which illustrates val...

Piezoelectric materials have attracted considerable attention over the last two decades because many technologies utilize their core properties of piezoelectric materials. Previous applications consisted bulk structures; however, a shift towards better performance and more simplified compatible fabrication method are required. Aluminum nitride (AlN) is material that fits these criteria; it has ...

Piezoelectric actuators (PEAs) have been widely used in micro- and nanopositioning applications due to their fine resolution, rapid responses, and large actuating forces. However, a major deficiency of PEAs is that their accuracy is seriously limited by hysteresis. This paper presents adaptive model predictive control technique for reducing hysteresis in PEAs based on autoregressive exogenous m...

Due to polarization of ions in crystals with noncentral symmetry, such as ZnO, GaN, and InN, a piezoelectric potential (piezopotential) is created in the crystal when stress is applied. Electronics fabricated using the inner-crystal piezopotential as a gate voltage to tune or control the charge transport behavior across a metal/semiconductor interface or a p-n junction are called piezotronics. ...

GaN nanowires are promising building blocks for future nanoelectronics, optoelectronic devices, and nanogenerators. Here, we report on strong piezoelectricity in individual single-crystal GaN nanowires revealed by direct measurement of the piezoelectric constant using piezoresponse force microscopy. Our experimental results show that individual c-axis GaN nanowires, with a characteristic dimens...

This paper reports on the first demonstration of aluminum nitride (AIN) piezoelectric logic switches that were fabricated with ultra-thin (100nm) AIN films and exhibit a 1 mV threshold voltage via the body-biasing scheme. The application of a relatively low (< 6 V) fixed potential to the body terminal of a 4-terminal switch has been cycled to > 109 cycles and, although the contact resistance wa...

This research seeks to develop a novel branch of materials systems called Distributed Intelligent Materials Systems (DIMS) which incorporate actuation, sensing, electronics and intelligence as inherent parts of the material structure. A microcantilever optical switch is fabricated as a concept demonstrator with Gallium nitride (GaN) as host material. GaN has several material characteristics whi...

High accuracy positioning stages with multiple degrees-of-freedom are ubiquitous in industrial manufacturing. Examples include probing and inspection systems, disk drive head assembly systems, and photolithographic positioning stages (microsteppers) in semiconductor manufacturing. Microsteppers are typically made of a lower-stage that actuates large high-speed movements and an upper-stage that ...