نتایج جستجو برای: orbital quantum dot

تعداد نتایج: 346003  

Journal: :journal of nanostructures 2013
a. rejo jeice k. s. joseph wilson

the combined effect of hydrostatic pressure and temperature on correlation energy in a triplet state of two electron spherical quantum dot with square well potential is computed. the result is presented taking gaas dot as an example. our result shows the correlation energies are i)negative in the triplet state contrast to the singlet state ii) it increases with increase in pressure  iii)further...

Journal: :Physical review 2022

The exchange interaction in a singlet-triplet qubit defined by two-electron states the double-quantum-dot system ("two-electron qubit") typically varies monotonically with and thus carries no sweet spot. Here we study four-electron ("four-electron qubit"). We demonstrate, using configuration-interaction calculations, that energy as function of detuning can be non-monotonic, suggesting existence...

پایان نامه :وزارت علوم، تحقیقات و فناوری - دانشگاه پیام نور - دانشکده علوم پایه 1388

چکیده ندارد.

Journal: :international journal of nanoscience and nanotechnology(ijnn 0
a. rezaei electrical engineering department, kermanshah university of technology, kermanshah, iran

complementary metal-oxide semiconductor (cmos) technology has been the industry standard to implement very large scale integrated (vlsi) devices for the last two decades. due to the consequences of miniaturization of such devices (i.e. increasing switching speeds, increasing complexity and decreasing power consumption), it is essential to replace them with a new technology. quantum-dot cellular...

Journal: :iranian journal of science and technology (sciences) 2015
jing-lin xiao

we study the eigenenergies and eigenfunctions of the ground and first excited states (gfes) of an electron strongly coupled to the lo-phonon in an asymmetry quantum dot (aqd) under an applied electric field by using a variational method of the pekar type (vmpt). this aqd two-level system may be viewed as a single qubit. when the electron is in the superposition state (ss) of the gfes, the effec...

Journal: :international journal of nano dimension 0
h. hoseinkhani department of physics, faculty of science, i.h.u tehran, iran. m. a. talebian darzi department of physics, faculty of science, i.h.u tehran, iran. m. abdollahi department of physics, faculty of science, i.h.u tehran, iran.

interaction and correlation effects in quantum dots play a fundamental role in defining both their equilibrium and transport properties. numerical methods are commonly employed to study such systems. in this paper we investigate the numerical calculation of quantum transport of electrons in spherical centered defect ingaas/algaas quantum dot (scdqd). the simulation is based on the imaginary time...

2010
Arka Majumdar Andrei Faraon Erik D. Kim Dirk Englund Hyochul Kim Pierre Petroff Jelena Vučković

We study the coupling between a photonic crystal cavity and an off-resonant quantum dot under resonant excitation of the cavity or the quantum dot. Linewidths of the quantum dot and the cavity as a function of the excitation laser power are measured. We show that the linewidth of the quantum dot, measured by observing the cavity emission, is significantly broadened compared to the theoretical e...

A. Rejo Jeice K. S. Joseph Wilson,

The combined effect of hydrostatic pressure and temperature on correlation energy in a triplet state of two electron spherical quantum dot with square well potential is computed. The result is presented taking GaAs dot as an example. Our result shows the correlation energies are i)negative in the triplet state contrast to the singlet state ii) it increases with increase in pressure  iii)further...

A. Eskandari-asl

The one photon absorption (OPA) cross section of a current carrying two-orbital quantum dot (QD) with strong electron-phonon interaction (polaron regime) is considered. Using the self-consistent non-equilibrium Hartree-Fock (HF) approximation, we determine the dependence of OPA cross section on the applied bias voltage, the strength of effective electron-electron interaction, and level spacing ...

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