A new non-linear method for design and analysis of solid state power amplifiers is presented and applied to an aluminum gallium nitride, gallium nitride (AlGaN-GaN) high electron-mobility transistor (HEMTs) on silicon-carbide (SiC) substrate for Ku band (12.4 13.6 GHz) applications. With combining output power of 8 transistors, maximum output power of 46.3 dBm (42.6 W), PAE of 43% and linear ga...

By comparing experimental and simulation data, surface forces of electro-mechanical memory cells were characterized. In the case of aluminum beams, surface forces were negligible due to rough surface topology. However, in the case of titanium-nitride beams, surface force density was estimated to be 624 kPa. The extracted value of surface force can be fed back into the finite-element-analysis (F...

On chip, high power (75mW), erbium-doped distributed feedback lasers are demonstrated in a CMOS compatible fabrication flow. The laser cavities consist of silicon nitride waveguide and grating features defined by wafer-scale immersion lithography and a top erbiumdoped aluminum oxide layer deposited as the final step in the fabrication process. 2013 Optical Society of America OCIS codes: (130.0...

Please cite the original version: Perros, Alexander & Bosund, Markus & Sajavaara, Timo & Laitinen, Mikko & Sainiemi, Lauri & Huhtio, Teppo & Lipsanen, Harri. 2012. Plasma etch characteristics of aluminum nitride mask layers grown by low-temperature plasma enhanced atomic layer deposition in SF6 based plasmas. Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. Volume 30, Issu...

The nature of structural degradation in AlGaN/GaN high electron mobility transistors (HEMTs) are investigated in this work. Moisture from the environment and/or adsorbed water on the III-N surface were found to play an important role in the formation of surface pits during OFF-state electrical stress. The mechanism of this water-related structural degradation is explained by an electrochemical ...