نتایج جستجو برای: ni mn ga
تعداد نتایج: 120807 فیلتر نتایج به سال:
Using density functional calculations, it is shown that pure MnN is stable in zincblende rather than in the experimentally reported distorted rocksalt structure. However, about 4% N vacancies are found to stabilize the rocksalt structure. It is found that C and O substitutions on N and Ga on Mn also favor rocksalt but Ni, SN, FeMn, and CoMn stabilize zincblende. This suggests that zincblende Mn...
Synthesis and magnetism of single-phase Mn-Ga films" (2015). David Sellmyer Publications. 252. Single-phase noncubic Mn-Ga films with a thickness of about 200 nm were fabricated by an in situ annealing of [Mn(x)/Ga(y)/Mn(x)] 5 multilayers deposited by e-beam evaporation. Mn-Ga alloys prepared in three different compositions Mn 2 Ga 5 and Mn 2 Ga were found to crystallize in the tet-ragonal tP14...
Nanostructured Mn Ga ribbons with and 1.1 were prepared using arc-melting, melt-spinning and annealing. As-spun samples crystallized into hexagonal and cubic Heusler crystal structures based on the concentration of Mn in Mn Ga. Upon vacuum-annealing the samples at 450 C for about 50 hours, both the hexagonal and cubic structures transformed into a tetragonal structure. High-temperature x-ray di...
Nanostructured Mn y Ga ribbons with varying Mn concentrations including Mn 1.2 Ga, Mn 1.4 Ga, Mn 1.6 Ga, and Mn 1.9 Ga were prepared using arc-melting and melt-spinning followed by a heat treatment. Our experimental investigation of the nanostructured ribbons shows that the material with y ¼ 1.2, 1.4, and 1.6 prefers the tetragonal L1 0 structure and that with y ¼ 1.9 prefers the D0 22 structur...
Clustering of (Ga,Mn)As is studied with the supercell density-functional calculations using the projector augmentedwave method. We find large binding energies for a single substitutional Mn atom to existing dimers and trimers giving rise to trimer and tetramer formation. For larger clusters this binding energy drops. In all cases studied, ferromagnetic alignment is found to be energetically mor...
We present a combined theoretical and experimental study of the ferromagnetic semiconductor (Ga,Mn)As which explains the remarkably large changes observed on low-temperature annealing. Careful control of the annealing conditions allows us to obtain samples with ferromagnetic transition temperatures up to 159 K. Ab initio calculations, in situ Auger spectroscopy, and resistivity measurements dur...
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