نتایج جستجو برای: negative differential resistance ndr

تعداد نتایج: 1150770  

Journal: :Chemistry 2001
J M Tour A M Rawlett M Kozaki Y Yao R C Jagessar S M Dirk D W Price M A Reed C W Zhou J Chen W Wang I Campbell

Presented here are several convergent synthetic routes to conjugated oligo(phenylene ethynylene)s. Some of these oligomers are free of functional groups, while others possess donor groups, acceptor groups, porphyrin interiors, and other heterocyclic interiors for various potential transmission and digital device applications. The syntheses of oligo(phenylene ethynylene)s with a variety of end g...

2006
A. B. Weerasekara S. G. Matsik G. S. Cymbalyuk A.G.U. Perera

Triggered pulsing in a multi-quantum well structure which shows s-type negative differential resistance (NDR) was investigated. First return maps of the inter-pulse time intervals (IPTI) show an interesting grouping pattern at slower pulse rates. Oscillations in the pulsing threshold level of the MQW device cause the grouping behavior. This pattern of IPTIs is similar to that of thermoreceptors...

2013
Wenzhi Wu Wanlin Guo Xiao Cheng Zeng

Graphyne, a two-dimensional carbon allotrope like graphene but containingdoubly and triply bonded carbon atoms, has been proven to possess amazing electronic properties as graphene. Although the electronic, optical, and mechanical properties of graphyne and graphyne nanoribbons (NRs) have been previously studied, their electron transport behaviors have not been understood. Here we report a comp...

Journal: :Chemistry, an Asian journal 2013
Yi-Cang Lai Tadanori Kurosawa Tomoya Higashihara Mitsuru Ueda Wen-Chang Chen

Two new oligoimides, OI(APAP-6FDA) and OI(APAN-6FDA), which consisted of electron-donating N-(4-aminophenyl)-N-phenyl-1-aminopyrene (APAP) or N-(4-aminophenyl)-N-phenyl-1-aminonaphthalene (APAN) moieties and electron-accepting 4,4′-(hexafluoroisopropylidene)diphthalic anhydride (6FDA) moieties, were designed and synthesized for application in electrical memory devices. Such devices, with the in...

2003

As research begins to explore potential nanotechnologies for future post-CMOS integrated systems, modeling and simulation environments must be developed that can accommodate the corresponding problem complexity and nontraditional device characteristics. This paper describes a circuitlevel simulator that can accommodate an important class of nanotechnology devices that are characterized by nonmo...

Journal: :Journal of the American Chemical Society 2004
Adi Salomon Rina Arad-Yellin Abraham Shanzer Amir Karton David Cahen

We show reproducible, stable negative differential resistance (NDR) at room temperature in molecule-controlled, solvent-free devices, based on reversible changes in molecule-electrode interface properties. The active component is the cyclic disulfide end of a series of molecules adsorbed onto mercury. As this active component is reduced, the Hg-molecule contact is broken, and an insulating barr...

2005
Serge Luryi

Three-terminal real-space transfer (RST) devices employ charge injection of hot electrons over a potential barrier into an independently contacted second conducting layer. The first conducting layer is the usual transistor channel, where electrons are heated by the source to drain field. The high RST injection is accompanied by a strong negative differential resistance (NDR) in the source-drain...

2014
Fengxia Zu Zuli Liu Kailun Yao Guoying Gao Huahua Fu Sicong Zhu Yun Ni Li Peng

The spin-polarized transport in a single-molecule magnet Fe4 sandwiched between two gold electrodes is studied, using nonequilibrium Green's functions in combination with the density-functional theory. We predict that the device possesses spin filter effect (SFE), spin valve effect (SVE), and negative differential resistance (NDR) behavior. Moreover, we also find that the appropriate chemical l...

2016
Ioan Bâldea

As a sanity test for the theoretical method employed, studies on (steady-state) charge transport through molecular devices usually confine themselves to check whether the method in question satisfies the charge conservation. Another important test of the theory's correctness is to check that the computed current does not depend on the choice of the central region (also referred to as the "exten...

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