In this paper, the electrical performance of double gate organic field effecttransistor (DG-OFET) are thoroughly investigated and feasibility of the deviceas an efficient biosensor is comprehensively assessed. The introduced deviceprovides better gate control over the channel, yielding better charge injectionproperties from source to channel and providing higher on-state...

Recent reports have shown that nanoscale electronic devices can be used to detect a change in electrical properties when receptor proteins bind to their corresponding antibodies functionalized on the surface of the device, in extracts from as few as ten lysed tumor cells. We hypothesized that nanotube-antibody devices could sensitively and specifically detect entire live cancer cells. We report...

Abstract In this paper issues, associated with the development of THz direct detectors and focal plane arrays in last decade are discussed. After short description general classification detectors, more details concern Schottky barrier diodes, CMOS-based microbolometers, field-effect transistor where links between devices modern technologies such as micromachining underlined. Special attention ...

We propose and investigate the intrinsically thinnest transistor concept: a monolayer ballistic heterojunction bipolar based on lateral heterostructure of transition metal dichalcogenides. The device is thinner than Field Effect Transistor because it does not need top or bottom gate, since transport controlled by electrochemical potential base electrode. As typical transistors, collector curren...

Differential reflectance spectroscopy (DRS) is a powerful tool to study processes during thin-film growth, especially that of transition metal dichalcogenides and organic thin films. To satisfy the requirements for in situ real-time monitoring film including spectral resolution sensitivity at level monolayers even sub-monolayers, most challenging technical task DRS reduce noise an extremely low...

Magnetometers exploiting interference effect of the superconducting wavefunction are known since realization first SQUID, with several improvements in performance following years. In this field, Superconducting Quantum Interference Proximity Transistor (SQUIPT) offers an interesting alternative to conventional SQUID thanks its lower power dissipation that makes it ideal for nanoscale and ultra-...

copper thin films with nano-scale structure have numerous applications in modern technology.  in this work, cu thin films with different thicknesses from 50–220 nm have been deposited on glass substrate by dc magnetron sputtering technique at room temperature in pure ar gas. the sputtering time was considered in 4, 8, 12 and 16 min, respectively. the thickness effect on the structural, morpholo...

0278-6648/02/$17.00 © 2002 IEEE 11 he transistor counts on the high-end microprocessor is rushing toward the 400-million mark and the feature dimensions are shrinking toward the nanometer scale. As a result, the thermal properties of semiconductor nanostructures are beginning to attract significant attention. Several major factors explain the recent interest to investigate thermal conductivity ...

Cointegration of single-transistor neurons and synapses for highly scalable neuromorphic hardware is demonstrated.